Datasheet > TSM028N04PQ56

TSM028N04PQ56

更新时间： 2024-02-09 05:41:45

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
6页	261K
描述
40V N-Channel MOSFET

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中文翻译

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技术参数
数据手册

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TSM028N04PQ56 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

TSM028N04PQ56 数据手册

TSM028N04PQ56

40V N-Channel MOSFET

PDFN56

Key Parameter Performance

Pin Definition:

1. Source

2. Source

3. Source

4. Gate

8. Drain

Parameter

V_DS

Value

Unit

7. Drain

6. Drain

5. Drain

R_DS(on)(max)

Q_g

2.8

mΩ

Features

Block Diagram

●

Low On-Resistance

Low Input Capacitance

Low Gate Charge

Ordering Information

Part No.

Package

Packing

TSM028N04PQ56 RLG

PDFN56

2.5kpcs / 13” Reel

Note: “G” denotes for Halogen- and Antimony-free as those which contain

<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds

N-Channel MOSFET

Absolute Maximum Ratings (T_C=25^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

T_C=25°C

Continuous Drain Current ^{(Note 3)}

T_A=25°C

140

I_D

Drain Current-Pulsed ^{(Note 1)}

I_DM

550

Single Pulse Avalanche Energy^,L=0.1mH

E_AS

201

T_C=25°C

Maximum Power Dissipation ^{(Note 2)}

T_A=25°C

P_D

4.4

Storage Temperature Range

T_STG

T_J

-55 to +150

°C

Operating Junction Temperature Range

Thermal Performance

Parameter

Symbol

R_ӨJC

Limit

1.5

Unit

^oC/W

Thermal Resistance - Junction to Case

Thermal Resistance - Junction to Ambient

R_ӨJA

1/6

Version: A14

12 3 4 5 6

中文翻译

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