Datasheet > TSM026NA03CR

TSM026NA03CR

更新时间： 2024-02-24 18:52:51

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
6页	340K
描述
N-Channel Power MOSFET

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数据手册

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TSM026NA03CR 数据手册

TSM026NA03CR

Taiwan Semiconductor

N-Channel Power MOSFET

30V, 168A, 2.6mΩ

FEATURES

KEY PERFORMANCE PARAMETERS

● Low R_DS(ON)to minimize conductive loss

PARAMETER

VALUE

UNIT

● Low gate charge for fast power switching

V_DS

● 100% UIS and R_gtested

● Compliant to RoHS directive 2011/65/EU and in

accordance to WEEE 2002/96/EC

V_GS= 10V

V_GS= 4.5V

2.6

R_DS(on)

(max)

mΩ

3.3

● Halogen-free according to IEC 61249-2-21

Q_g

APPLICATION

● DC-DC Converters

● Battery Power Management

● ORing FET/Load Switching

PDFN56

Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

PARAMETER

SYMBOL

V_DS

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

168

T_C= 25°C

T_A= 25°C

Continuous Drain Current ^{(Note 1)}

Pulsed Drain Current

Single Pulsed Avalanche Current ^{(Note 2)}

Single Pulsed Avalanche Energy ^{(Note 2)}

I_D

672

I_DM

I_AS

E_AS

205

T_C= 25°C

T_C= 125°C

T_A= 25°C

T_A= 125°C

125

Total Power Dissipation

P_D

2.6

P_D

0.5

Operating Junction and Storage Temperature Range

T_J, T_STG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

R_ӨJC

LIMIT

UNIT

°C/W

Junction to Case Thermal Resistance

Junction to Ambient Thermal Resistance

R_ӨJA

Thermal Performance Note: R_ӨJAis the sum of the junction-to-case and case-to-ambient thermal resistances. The case-

thermal reference is defined at the solder mounting surface of the drain pins. R_ӨJAis guaranteed by design while R_ӨCAis

determined by the user’s board design.

Version: B1610

12 3 4 5 6

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