5秒后页面跳转
TSI10H120CW PDF预览

TSI10H120CW

更新时间: 2024-11-09 01:09:23
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
5页 245K
描述
10A, 100V - 200V Trench Schottky Rectifiers

TSI10H120CW 数据手册

 浏览型号TSI10H120CW的Datasheet PDF文件第2页浏览型号TSI10H120CW的Datasheet PDF文件第3页浏览型号TSI10H120CW的Datasheet PDF文件第4页浏览型号TSI10H120CW的Datasheet PDF文件第5页 
TSI10H100CW - TSI10H200CW  
Taiwan Semiconductor  
10A, 100V - 200V Trench Schottky Rectifiers  
FEATURES  
- Patented Trench Schottky technology  
- Excellent high temperature stability  
- Low forward voltage  
- Low power loss/ high efficiency  
- High forward surge capability  
1
- Compliant to RoHS directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
2
3
I2PAK  
- Halogen-free according to IEC 61249-2-21 definition  
TYPICAL APPLICATIONS  
Trench Schottky barrier rectifier are designed for high frequency  
miniature switched mode power supplies such as adapters, lighting  
and on-board DC/DC converters.  
MECHANICAL DATA  
Case: I2PAK  
Molding compound meets UL 94 V-0 flammability rating  
Packing code with suffix "G" means green compound (halogen-free)  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test  
Polarity: As marked  
Weight: 1.6 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)  
TSI10H  
100CW  
100  
TSI10H  
120CW  
120  
TSI10H  
150CW  
150  
TSI10H  
200CW  
200  
PARAMETER  
SYMBOL  
VRRM  
UNIT  
Maximum repetitive peak reverse voltage  
V
A
per device  
per diode  
10  
5
Maximum average forward  
rectified current  
IF(AV)  
Peak forward surge current, 8.3ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
100  
A
Voltage rate of change (Rated VR)  
10000  
dV/dt  
V/μs  
TYP MAX TYP MAX TYP MAX TYP MAX  
0.62 0.70 0.69 0.79 0.78 0.88 0.81 0.91  
0.55 0.63 0.58 0.66 0.64 0.72 0.67 0.75  
IF = 5A  
IF = 5A  
TJ = 25°C  
Instantaneous forward  
voltage per diode (Note1)  
VF  
IR  
V
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
-
-
100  
15  
-
-
100  
15  
-
100  
10  
-
100  
10  
μA  
mA  
°C/W  
°C  
Instantaneous reverse current per  
diode at rated reverse voltage  
1.5  
1.5  
Typical thermal resistance per diode  
Operating junction temperature range  
Storage temperature range  
RθJC  
TJ  
3.2  
- 55 to +150  
- 55 to +150  
TSTG  
°C  
Note 1: Pulse test with pulse width=300μs, 1% duty cycle  
Document Number: DS_D0000003  
Version: A15  

与TSI10H120CW相关器件

型号 品牌 获取价格 描述 数据表
TSI10H150CW TSC

获取价格

10A, 100V - 200V Trench Schottky Rectifiers
TSI10H200CW TSC

获取价格

10A, 100V - 200V Trench Schottky Rectifiers
TSI10N TRACOPOWER

获取价格

DC/DC Converter - TSI-10N Series 10 Watt
TSI10N-0510 TRACOPOWER

获取价格

DC/DC Converter - TSI-10N Series 10 Watt
TSI10N-0510D TRACOPOWER

获取价格

DC/DC Converter - TSI-10N Series 10 Watt
TSI10N-1211 TRACOPOWER

获取价格

DC/DC Converter - TSI-10N Series 10 Watt
TSI10N-1211D TRACOPOWER

获取价格

DC/DC Converter - TSI-10N Series 10 Watt
TSI10N-2410 TRACOPOWER

获取价格

DC/DC Converter - TSI-10N Series 10 Watt
TSI10N-2410D TRACOPOWER

获取价格

DC/DC Converter - TSI-10N Series 10 Watt
TSI10N-2411 TRACOPOWER

获取价格

DC/DC Converter - TSI-10N Series 10 Watt