TSI10H100CW - TSI10H200CW
Taiwan Semiconductor
10A, 100V - 200V Trench Schottky Rectifiers
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
1
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
2
3
I2PAK
- Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case: I2PAK
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 1.6 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
TSI10H
100CW
100
TSI10H
120CW
120
TSI10H
150CW
150
TSI10H
200CW
200
PARAMETER
SYMBOL
VRRM
UNIT
Maximum repetitive peak reverse voltage
V
A
per device
per diode
10
5
Maximum average forward
rectified current
IF(AV)
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
IFSM
100
A
Voltage rate of change (Rated VR)
10000
dV/dt
V/μs
TYP MAX TYP MAX TYP MAX TYP MAX
0.62 0.70 0.69 0.79 0.78 0.88 0.81 0.91
0.55 0.63 0.58 0.66 0.64 0.72 0.67 0.75
IF = 5A
IF = 5A
TJ = 25°C
Instantaneous forward
voltage per diode (Note1)
VF
IR
V
TJ = 125°C
TJ = 25°C
TJ = 125°C
-
-
100
15
-
-
100
15
-
100
10
-
100
10
μA
mA
°C/W
°C
Instantaneous reverse current per
diode at rated reverse voltage
1.5
1.5
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
RθJC
TJ
3.2
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Document Number: DS_D0000003
Version: A15