Datasheet > TSI12N60M

TSI12N60M

更新时间： 2024-09-20 17:15:31

品牌	Logo	应用领域
信安 - TRUESEMI		/
页数	文件大小	规格书
8页	429K
描述
TO-262

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中文翻译

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数据手册

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TSI12N60M 数据手册

TSB12N60M/TSI12N60M

600V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Truesemi‘s

• 12A,600V,Max.R_DS(on)=0.7 Ω @ V_GS=10V

• Low gate charge(typical 52nC)

• High ruggedness

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge

topology.

TSB12N60M

TSI12N60M

TO-262

TO-263

Absolute Maximum Ratings

T_C=25℃ unless otherwise specified

Symbol

V_DSS

Parameter

Value

Units

Drain-Source Voltage

Gate-Source Voltage

600

V_GS

T_C= 25℃

T_C= 100℃

(Note 1)

I_D

Drain Current

7.4

I_DM

E_AS

I_AR

Pulsed Drain Current

Single Pulsed Avalanche Energy

Avalanche Current

(Note 2)

(Note 1)

(Note 3)

865

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

4.5

230

Power Dissipation (T_C= 25℃)

-Derate above 25℃

P_D

T_J, T_STG

T_L

1.85

-55 to +150

W/℃

℃

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

300

℃

1/8” from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Resistance Characteristics

Symbol

Parameter

Typ

Max

0.54

0.5

Units

℃/W

R_θJC

Thermal Resistance,Junction-to-Case

Thermal Resistance,Case-to-Sink Typ.

R_θCS

R_θJA

Thermal Resistance,Junction-to-Ambient

62.5

Ver.B1

www.truesemi.com

12 3 4 5 6 7 8

中文翻译

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