TSP5N60M / TSF5N60M
600V N-Channel MOSFET
General Description
Features
This Pow er MOSFET is produced using Tr uesemi‘s
advanced planar stripe DMOS technology.
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4.5A, 600V, RDS(on) = 2.50 @VGS = 10 V
Low gate charge ( typical 16nC)
High ruggedness
Fast wsitching
100% avalanche tested
This advanced technology has been espe cially tailored to
minimize o n-state r esistance, pr ovide superior switching
performance, and withstand high ener gy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency sw itched mode power supplies,
active power factor corr ection based on half br idge
topology.
Improved dv/dt capability
D
●
◀
▲
●
●
G
TO-220F
TO-220
G D
S
G
D S
Absolute Maximum Ratings
T = 25°Cunless otherwise noted
C
Symbol
VDSS
Parameter
TSP5N60M
TSF5N60M
Units
V
Drain-Source Voltage
600
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
4.5
2.7
18
4.5*
2.7 *
18 *
A
A
IDM
(Note 1)
Drain Current
A
VGSS
EAS
EAR
Gate-Source Voltage
30
180
10.4
4.5
V
(Note 2)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
mJ
mJ
V/ns
W
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
dv/dt
PD
104
34
- Derate above 25°C
Operating and Storage Temperature Range
0.83
0.27
W/°C
°C
TJ, TSTG
TL
-55 to +150
300
Maximum lead temperature for soldering purposes,
°C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RJC
Parameter
TSP5N60M
TSF5N60M
Units
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
1.2
0.5
3.65
--
RCS
RJA
62.5
62.5
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