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TSF5N60M PDF预览

TSF5N60M

更新时间: 2024-11-20 07:07:59
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其他 - ETC /
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7页 337K
描述
600V N-Channel MOSFET

TSF5N60M 数据手册

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TSP5N60M / TSF5N60M  
600V N-Channel MOSFET  
General Description  
Features  
This Pow er MOSFET is produced using Tr uesemi‘s  
advanced planar stripe DMOS technology.  
4.5A, 600V, RDS(on) = 2.50@VGS = 10 V  
Low gate charge ( typical 16nC)  
High ruggedness  
Fast wsitching  
100% avalanche tested  
This advanced technology has been espe cially tailored to  
minimize o n-state r esistance, pr ovide superior switching  
performance, and withstand high ener gy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency sw itched mode power supplies,  
active power factor corr ection based on half br idge  
topology.  
Improved dv/dt capability  
D  
G
TO-220F  
TO-220  
G D  
S
G
D S  
S  
Absolute Maximum Ratings  
T = 25°Cunless otherwise noted  
C
Symbol  
VDSS  
Parameter  
TSP5N60M  
TSF5N60M  
Units  
V
Drain-Source Voltage  
600  
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
Drain Current  
4.5  
2.7  
18  
4.5*  
2.7 *  
18 *  
A
A
IDM  
(Note 1)  
Drain Current  
A
VGSS  
EAS  
EAR  
Gate-Source Voltage  
30  
180  
10.4  
4.5  
V
(Note 2)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
mJ  
mJ  
V/ns  
W
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TC = 25°C)  
dv/dt  
PD  
104  
34  
- Derate above 25°C  
Operating and Storage Temperature Range  
0.83  
0.27  
W/°C  
°C  
TJ, TSTG  
TL  
-55 to +150  
300  
Maximum lead temperature for soldering purposes,  
°C  
1/8" from case for 5 seconds  
* Drain current limited by maximum junction temperature.  
Thermal Characteristics  
Symbol  
RJC  
Parameter  
TSP5N60M  
TSF5N60M  
Units  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink Typ.  
Thermal Resistance, Junction-to-Ambient  
1.2  
0.5  
3.65  
--  
RCS  
RJA  
62.5  
62.5  
代理销售深圳德江源电子有限公司 0755-82966416 15989331311  

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