TSF70R340S1
700V 15A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
• 750V @TJ = 150 ℃
• Typ. RDS(on) = 0.3Ω
• Ultra Low gate charge (typ. Qg = 43nC)
• 100% avalanche tested
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Drain-Source Voltage
Value
700
15*
Unit
V
Drain Current
-Continuous (TC = 25℃)
-Continuous (TC = 100℃)
ID
A
9.4*
IDM
VGSS
EAS
IAR
Drain Current – Pulsed
(Note 1)
45
A
V
mJ
A
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
30
±
284
2.4
(Note 1)
(Note 1)
EAR
Repetitive Avalanche Energy
0.43
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
15
32
V/ns
PD
TJ, TSTG
TL
Power Dissipation (TC = 25℃)
W
℃
℃
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
-55 to +150
300
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
Value
3.9
--
Unit
RθJC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
℃/W
℃/W
℃/W
RθCS
RθJA
80
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