5秒后页面跳转
TSF5N65M PDF预览

TSF5N65M

更新时间: 2024-11-19 17:15:23
品牌 Logo 应用领域
信安 - TRUESEMI /
页数 文件大小 规格书
9页 1115K
描述
TO-220F

TSF5N65M 数据手册

 浏览型号TSF5N65M的Datasheet PDF文件第2页浏览型号TSF5N65M的Datasheet PDF文件第3页浏览型号TSF5N65M的Datasheet PDF文件第4页浏览型号TSF5N65M的Datasheet PDF文件第5页浏览型号TSF5N65M的Datasheet PDF文件第6页浏览型号TSF5N65M的Datasheet PDF文件第7页 
TSP5N65M/TSF5N65M  
650V N-Channel MOSFET  
General Description  
Features  
This Power MOSFET is produced using Truesemi‘s  
• 4.5A,650V,Max.RDS(on)=3.0 Ω @ VGS =10V  
• Low gate charge(typical 16nC)  
• High ruggedness  
• Fast switching  
• 100% avalanche tested  
• Improved dv/dt capability  
advanced planar stripe DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switched mode power supplies,  
active power factor correction based on half bridge  
topology.  
Absolute Maximum Ratings  
TC=25unless otherwise specified  
TSP5N65M  
TSF5N65M  
Symbol  
VDSS  
Parameter  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
650  
VGS  
± 30  
V
TC = 25  
TC = 100℃  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 3)  
4.5  
2.7  
18  
4.5*  
2.7*  
18*  
A
ID  
Drain Current  
A
IDM  
EAS  
Pulsed Drain Current  
A
Single Pulsed Avalanche Energy  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
180  
10.4  
4.5  
mJ  
mJ  
V/ns  
W
EAR  
dv/dt  
104  
34  
Power Dissipation (TC = 25)  
-Derate above 25℃  
PD  
TJ, TSTG  
TL  
0.83  
0.27  
W/℃  
Operating and Storage Temperature Range  
-55 to +150  
Maximum lead temperature for soldering purposes,  
300  
1/8” from case for 5 seconds  
* Drain current limited by maximum junction temperature.  
Thermal Resistance Characteristics  
TSP5N65M  
TSF5N65M  
3.65  
Symbol  
Parameter  
Units  
/W  
/W  
/W  
RθJC  
Thermal Resistance,Junction-to-Case  
Thermal Resistance,Case-to-Sink Typ.  
1.2  
0.5  
--  
RθCS  
RθJA  
Thermal Resistance,Junction-to-Ambient  
62.5  
62.5  
© 2018 Truesemi Semiconductor Corporation  
Ver.B1  
www.truesemi.com  

与TSF5N65M相关器件

型号 品牌 获取价格 描述 数据表
TSF6 ADAM-TECH

获取价格

Modular Terminal Block, 10A, 1 Deck(s)
TSF60R190S1 TRUESEMI

获取价格

TO-220F
TSF60R190S2 TRUESEMI

获取价格

TO-220F
TSF60R280S1 TRUESEMI

获取价格

TO-220F
TSF60R380S1 TRUESEMI

获取价格

TO-220F
TSF60R460S1 TRUESEMI

获取价格

TO-220F
TSF60R650S1 TRUESEMI

获取价格

TO-220F
TSF60R850S1 TRUESEMI

获取价格

TO-220F
TSF61 TAITRON

获取价格

6.0A Super Fast Recovery Rectifier
TSF62 TAITRON

获取价格

6.0A Super Fast Recovery Rectifier