5秒后页面跳转
TSF30L100C PDF预览

TSF30L100C

更新时间: 2024-11-13 01:08:23
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
5页 247K
描述
Trench Schottky Rectifier

TSF30L100C 数据手册

 浏览型号TSF30L100C的Datasheet PDF文件第2页浏览型号TSF30L100C的Datasheet PDF文件第3页浏览型号TSF30L100C的Datasheet PDF文件第4页浏览型号TSF30L100C的Datasheet PDF文件第5页 
TSF30L100C - TSF30L200C  
Taiwan Semiconductor  
Trench Schottky Rectifier  
FEATURES  
- Patented Trench Schottky technology  
- Excellent high temperature stability  
- Low forward voltage  
- Low power loss/ high efficiency  
- High forward surge capability  
- Compliant to RoHS directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
ITO-220AB  
- Halogen-free according to IEC 61249-2-21 definition  
TYPICAL APPLICATIONS  
Trench Schottky barrier rectifier are designed for high frequency  
miniature switched mode power supplies such as adapters, lighting  
and on-board DC/DC converters.  
MECHANICAL DATA  
Case: ITO-220AB  
Molding compound meets UL 94 V-0 flammability rating  
Packing code with suffix "G" means green compound (halogen-free)  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 2 whisker test  
Polarity: As marked  
Mounting torque: 0.56 Nm max.  
Weight: 1.7 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)  
TSF30L  
100C  
100  
TSF30L  
120C  
120  
TSF30L  
150C  
150  
TSF30L  
200C  
200  
PARAMETER  
SYMBOL  
VRRM  
UNIT  
Maximum repetitive peak reverse voltage  
V
A
per device  
per diode  
30  
15  
Maximum average forward  
rectified current  
IF(AV)  
Peak forward surge current, 8.3ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
160  
A
Voltage rate of change (Rated VR)  
10000  
dV/dt  
V/μs  
TYP  
MAX  
0.80  
0.70  
250  
25  
TYP  
MAX  
TYP  
MAX  
0.92  
0.78  
100  
15  
TYP  
MAX  
0.96  
0.81  
100  
15  
IF = 15A  
IF = 15A  
TJ = 25°C  
0.73  
0.64  
-
0.80  
0.67  
-
0.88  
0.76  
250  
25  
0.84  
0.70  
-
0.86  
0.73  
-
Instantaneous forward  
voltage per diode (Note1)  
VF  
IR  
V
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
μA  
mA  
°C/W  
°C  
Instantaneous reverse current per  
diode at rated reverse voltage  
7
4
3
3
Typical thermal resistance per diode  
Operating junction temperature range  
Storage temperature range  
RθJC  
TJ  
4
4.5  
- 55 to +150  
- 55 to +150  
TSTG  
°C  
Note 1: Pulse test with pulse width=300μs, 1% duty cycle  
Document Number: DS_1411089  
Version: B14  

与TSF30L100C相关器件

型号 品牌 获取价格 描述 数据表
TSF30L120C TSC

获取价格

Trench Schottky Rectifier
TSF30L150C TSC

获取价格

Trench Schottky Rectifier
TSF30L200C TSC

获取价格

Trench Schottky Rectifier
TSF30L45C TSC

获取价格

Trench Schottky Rectifier
TSF30L60C TSC

获取价格

Trench Schottky Rectifier
TSF30U100C TSC

获取价格

Trench Schottky Rectifier
TSF30U120C TSC

获取价格

Trench Schottky Rectifier
TSF30U45C TSC

获取价格

Trench MOS Barrier Schottky Rectifier
TSF31 TAITRON

获取价格

3.0A Super Fast Recovery Rectifier
TSF310D00-S4 TOKEN

获取价格

Front End Filters