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TSF30U100C PDF预览

TSF30U100C

更新时间: 2024-11-13 01:18:15
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
5页 219K
描述
Trench Schottky Rectifier

TSF30U100C 数据手册

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TSF30U100C thru TSF30U120C  
Taiwan Semiconductor  
Trench Schottky Rectifier  
FEATURES  
- Patented Trench Schottky technology  
- Excellent high temperature stability  
- Low forward voltage  
- Lower power loss/ High efficiency  
- High forward surge capability  
- Compliant to RoHS directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
ITO-220AB  
TYPICAL APPLICATIONS  
Trench Schottky barrier rectifier are designed for high frequency  
miniature switched mode power supplies such as adapters, lighting  
and on-board DC/DC converters.  
MECHANICAL DATA  
Case: ITO-220AB  
Molding compound meets UL 94 V-0 flammability rating  
Packing code with suffix "G" means green compound (halogen-free)  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 2 whisker test  
Polarity: As marked  
Mounting torque: 0.56 Nm max.  
Weight: 1.7 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)  
TSF30U  
100C  
100  
TSF30U  
120C  
120  
PARAMETER  
SYMBOL  
VRRM  
UNIT  
Maximum repetitive peak reverse voltage  
V
A
per device  
per diode  
30  
15  
Maximum average forward rectified  
current  
IF(AV)  
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
dV/dt  
VAC  
160  
10000  
1500  
A
V/μs  
V
Voltage rate of change (Rated VR)  
Isolation voltage from terminal to heatsink t = 1 min  
Typ.  
Max.  
Typ.  
Max.  
IF = 5A  
0.52  
0.56  
0.66  
0.44  
0.51  
0.60  
12  
-
-
0.56  
0.65  
0.78  
0.49  
0.56  
0.65  
15  
-
-
TJ = 25°C  
VF  
IF = 7.5A  
IF = 15A  
IF = 5A  
0.74  
-
0.88  
-
Instantaneous forward voltage per diode  
( Note1 )  
V
TJ = 125°C  
VF  
IF = 7.5A  
IF = 15A  
-
-
0.67  
500  
35  
0.75  
500  
35  
TJ = 25°C  
μA  
mA  
°C/W  
°C  
Instantaneous reverse current per diode at rated  
reverse voltage  
IR  
TJ = 125°C  
7.0  
5
Typical thermal resistance per diode  
Operating junction temperature range  
Storage temperature range  
RθJC  
TJ  
2.5  
3.5  
- 55 to +150  
- 55 to +150  
TSTG  
°C  
Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle  
Document Number: DS_D1411051  
Version: D14  

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