TSF30U100C thru TSF30U120C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
TSF30U
100C
100
TSF30U
120C
120
PARAMETER
SYMBOL
VRRM
UNIT
Maximum repetitive peak reverse voltage
V
A
per device
per diode
30
15
Maximum average forward rectified
current
IF(AV)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
dV/dt
VAC
160
10000
1500
A
V/μs
V
Voltage rate of change (Rated VR)
Isolation voltage from terminal to heatsink t = 1 min
Typ.
Max.
Typ.
Max.
IF = 5A
0.52
0.56
0.66
0.44
0.51
0.60
12
-
-
0.56
0.65
0.78
0.49
0.56
0.65
15
-
-
TJ = 25°C
VF
IF = 7.5A
IF = 15A
IF = 5A
0.74
-
0.88
-
Instantaneous forward voltage per diode
( Note1 )
V
TJ = 125°C
VF
IF = 7.5A
IF = 15A
-
-
0.67
500
35
0.75
500
35
TJ = 25°C
μA
mA
°C/W
°C
Instantaneous reverse current per diode at rated
reverse voltage
IR
TJ = 125°C
7.0
5
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
RθJC
TJ
2.5
3.5
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle
Document Number: DS_D1411051
Version: D14