Datasheet > TSF30U100C

TSF30U100C

更新时间： 2024-11-13 01:18:15

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	219K
描述
Trench Schottky Rectifier

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中文翻译

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数据手册

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TSF30U100C 数据手册

TSF30U100C thru TSF30U120C

Taiwan Semiconductor

Trench Schottky Rectifier

FEATURES

- Patented Trench Schottky technology

- Excellent high temperature stability

- Low forward voltage

- Lower power loss/ High efficiency

- High forward surge capability

- Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

ITO-220AB

TYPICAL APPLICATIONS

Trench Schottky barrier rectifier are designed for high frequency

miniature switched mode power supplies such as adapters, lighting

and on-board DC/DC converters.

MECHANICAL DATA

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

Packing code with suffix "G" means green compound (halogen-free)

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 2 whisker test

Polarity: As marked

Mounting torque: 0.56 Nm max.

Weight: 1.7 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

TSF30U

100C

100

TSF30U

120C

120

PARAMETER

SYMBOL

V_RRM

UNIT

Maximum repetitive peak reverse voltage

per device

per diode

Maximum average forward rectified

current

I_F(AV)

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

dV/dt

V_AC

160

10000

1500

V/μs

Voltage rate of change (Rated V_R)

Isolation voltage from terminal to heatsink t = 1 min

Typ.

Max.

Typ.

Max.

I_F= 5A

0.52

0.56

0.66

0.44

0.51

0.60

0.56

0.65

0.78

0.49

0.56

0.65

T_J= 25°C

V_F

I_F= 7.5A

I_F= 15A

I_F= 5A

0.74

0.88

Instantaneous forward voltage per diode

( Note1 )

T_J= 125°C

V_F

I_F= 7.5A

I_F= 15A

0.67

500

0.75

500

T_J= 25°C

μA

°C/W

°C

Instantaneous reverse current per diode at rated

reverse voltage

I_R

T_J= 125°C

7.0

Typical thermal resistance per diode

Operating junction temperature range

Storage temperature range

R_θJC

T_J

2.5

3.5

- 55 to +150

T_STG

°C

Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle

Document Number: DS_D1411051

Version: D14

12 3 4 5

中文翻译

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