TSB1424
Low Vcesat PNP Transistor
SOT-89
PRODUCT SUMMARY
Pin Definition:
1. Base
2. Collector
3. Emitter
BVCBO
BVCEO
IC
-20V
-20V
-3A
VCE(SAT)
-0.2V @ IC / IB = -2A / -100mA
Features
Ordering Information
●
Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.)
Complementary part with TSD2150
Part No.
Package
SOT-89
Packing
●
TSB1424CY RM
1Kpcs / 7” Reel
Structure
●
Epitaxial Planar Type
PNP Silicon Transistor
●
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
-20
-20
V
-6
V
DC
-3
Collector Current
IC
A
Pulse
-5 (note1)
0.6
Collector Power Dissipation
PD
W
2 (note 2)
+150
Operating Junction Temperature
TJ
oC
oC
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=10ms, Duty≤50%
TSTG
- 55 to +150
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
Typ
--
Max
--
Unit
Collector-Base Breakdown Voltage
IC = -50uA, IE = 0
-20
-20
-6
V
V
Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0
--
--
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE = -50uA, IC = 0
--
--
V
VCB = -20V, IE = 0
VEB = -5V, IC = 0
--
--
-0.1
-0.1
-0.5
390
uA
uA
V
Emitter Cutoff Current
IEBO
--
--
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
IC / IB = -2A / -100mA
VCE = -2V, IC = 100mA
VCE =-2V, IE=0.5A,
f=100MHz
VCE(SAT)
hFE
--
-0.2
--
120
Transition Frequency
Output Capacitance
fT
--
--
200
28
--
--
MHz
pF
VCB = -10V, IE = 0, f=1MHz
Cob
hFE values are classified as follows:
Rank
hFE
Q
R
120~270
180~390
1/4
Version: A07