Datasheet > TSB1424ACY

TSB1424ACY

更新时间： 2024-11-23 22:41:59

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
3页	71K
描述
Low Vce(sat) PNP Transistor

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中文翻译

获取价格

技术参数
数据手册

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TSB1424ACY 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.59
Is Samacsys：	N	Base Number Matches：	1

TSB1424ACY 数据手册

TSB1424A

Low Vce(sat) PNP Transistor

Pin assignment:

BV_CEO= - 50V

Ic = - 3A

1. Base

V_{CE (SAT)}, = - 0.35V(typ.) @Ic / Ib = - 2A / - 0.1A

2. Collector

3. Emitter

Features

Ordering Information

ꢀ

Low V_{CE (SAT).}

Part No.

TSB1424ACW 2.5k per reel SOT-223

TSB1424ACY 1k per reel SOT-89

Packing

Package Marking

ꢀ

Excellent DC current gain characteristics

Structure

ꢀ

Epitaxial planar type.

ꢀ

Complementary to TSD2150A

Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

- 50V

- 6

- 3

Pulse

- 5

Collector Power Dissipation

SOT-89

P_D

0.5

SOT-223

1.5

Operating Junction Temperature

T_J

+150

^oC

Operating Junction and Storage Temperature Range

Note: 1. Single pulse, Pw = 10mS, Duty <= 30%

T_STG

- 55 to +150

Electrical Characteristics

Ta = 25 ^oC unless otherwise noted

Parameter

Static

Conditions

Symbol

Min

Typ

Max

Unit

Collector-Base Voltage

I_C= - 50uA

I_C= - 1mA

BV_CBO

BV_CEO

BV_EBO

I_CBO

- 50

- 6

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= - 50uA

V_CB= - 20V

- 0.1

-0.1

- 0.5

Emitter Cutoff Current

V_EB= - 5V

I_EBO

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

I_C/ I_B= - 2A / - 0.1A

V_CE= 2V, I_C= 100mA

V_CE= 2V, I_C= 1A

V_CE= 2V, I_C= 2A

V_CE= - 2V, I_C= - 500mA,

f = 100MHz

V_CE(SAT)

h_FE

-0.35

180

h_FE

560

h_FE

Transition Frequency

Output Capacitance

f_T

240

MHz

V_CB= - 10V, f=1MHz

Cob

Note : pulse test: pulse width <=380uS, duty cycle <=2%

TSB1424A

1-1

2003/12 rev. B

12 3

中文翻译

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