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TRF8010

更新时间： 2024-11-22 22:24:11
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德州仪器 - TI 驱动器
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10页 187K
描述
900-MHz RF TRANSMIT DRIVER

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TRF8010 数据手册

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TRF8010  
900-MHz RF TRANSMIT DRIVER  
SLWS031B – JULY 1996– REVISED MAY 1997  
PWP PACKAGE  
(TOP VIEW)  
Operates from 3.6-V and 4.8-V Power  
Supplies for AMPS/NADC and GSM  
Applications Respectively  
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
GND  
GND  
RFIN  
GND  
NC  
VPC  
GND  
NC  
GND  
GND  
RFOUT  
GND  
GND  
Unconditionally Stable  
Wide UHF Frequency Range  
800 MHz to 1000 MHz  
21 dBm and 23 dBm Typical Output Power  
in AMPS/NADC and GSM Applications  
Respectively  
TXEN  
GND  
V
V
CC  
CC  
Linear Ramp Control  
V
BB  
GND  
GND  
Transmit Enable/Disable Control  
Advanced BiCMOS Processing Technology  
for Low-Power Consumption, High  
NC – No internal connection  
Efficiency, and Highly Linear Operation  
Minimum of External Components  
Required for Operation  
Surface-Mount Thermally Enhanced  
Package for Extremely Small Circuit  
Footprint  
description  
The TRF8010 is an RF transmit driver amplifier for 900-MHz digital, analog, and dual-mode communication  
applications. It consists of a two-stage amplifier and a linear ramp controller for burst control in TDMA (time  
division multiple access) applications. Very few external components are required for operation.  
The TRF8010 amplifies the RF signal from the preceding modulator and upconverter stages in an RF section  
of a transmitter to a level that is sufficient to drive a final RF power output device. The output impedance of  
RFOUT is approximately 50 Ω. But, since RFOUT is connected to an open-collector output device, minimal  
external matching is required.  
The device is enabled when the TXEN input is held high. A power control signal applied to the VPC input can  
ramp the RF output power up or down to meet ramp and spurious emission specifications in TDMA systems.  
The power control signal causes a linear change in output power as the voltage applied to VPC varies between  
0 V and 3 V. With the RF input power applied to RFIN at 0 dBm and TXEN high, adjusting VPC from 0 V to  
3 V increases the output power from a typical value of –54 dBm at VPC = 0 V to the output power appropriate  
for the application:  
21 dBm typical for AMPS/NADC (Advanced Mobile Phone Service/North American Digital Cellular)  
operation  
23 dBm typical for GSM (Global System for Mobile Communications) operation  
Forward isolation with the RF input power applied to RFIN at 0 dBm, VPC = 0 V, and TXEN high is typically  
greater than 50 dB.  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...10

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