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TRF8011

更新时间： 2024-11-18 22:24:11
品牌 Logo 应用领域
德州仪器 - TI 驱动器
页数 文件大小 规格书
8页 144K
描述
900-MHz RF TRANSMIT DRIVER

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TRF8011 数据手册

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TRF8011  
900-MHz RF TRANSMIT DRIVER  
SLWS056B – FEBRUARY 1997 – REVISED OCTOBER 1997  
PWP PACKAGE  
(TOP VIEW)  
Operates from 4.8–V Power Supply for  
900–MHz Applications  
Unconditionally Stable  
GND  
GND  
RFIN  
GND  
NC  
VPC  
GND  
NC  
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
GND  
GND  
RFOUT  
GND  
GND  
Wide UHF Frequency Range: 800 MHz to  
1000 MHz  
24.5 dBm Typical Output Power  
Linear Ramp Control  
TXEN  
GND  
Transmit Enable/Disable Control  
V
V
CC  
CC  
Advanced BiCMOS Processing Technology  
for Low-Power Consumption, High  
Efficiency, and Highly Linear Operation  
V
BB  
GND  
GND  
Minimum of External Components  
Required for Operation  
NC – No internal connection  
Thermally Enhanced Surface-Mount  
Package for Extremely Small Circuit  
Footprint  
description  
The TRF8011 RF transmit driver amplifier is for use in 800 to 1000 MHz wireless communication systems. It  
consists of a two-stage amplifier and a linear ramp controller for burst control in TDMA (time-division multiple  
access) applications. Very few external components are required for operation. The input is dc-blocked and  
requires no external matching. The output requires external matching suitable for the application frequency.  
The device is enabled when the TXEN input is held high. A power control signal applied to the VPC input can  
ramp the RF output power up or down to meet ramp and spurious emission specifications in TDMA systems.  
The power control signal causes a linear change in output power as the voltage applied to VPC varies between  
0 V and 3 V. With the RF input power applied to RFIN at 5 dBm and TXEN high, adjusting VPC from 0 V to  
3 V increases the output power from a typical value of –50 dBm to 24.5 dBm at 900 MHz. Forward isolation with  
the input power applied to RFIN at 5 dBm, VPC = 0 V, and TXEN high is typically greater than 50 dB.  
TheTRF8011isavailableinathermallyenhanced, surface-mount, 20-pinPowerPADTM(PWP)thin-shrinksmall  
outline package (TSSOP) and is characterized for operation from –40°C to 85°C. The PWP package has a  
solderable pad that can improve the package thermal performance by bonding the pad to an external thermal  
plane. The pad also acts as a low-inductance electrical path to ground and must be electrically connected to  
the PCB ground plane as a continuation of the regular package terminals that are designated GND.  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PowerPAD is a trademark of Texas Instruments Incorporated.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
12345678

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