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TRF2052PWR

更新时间： 2024-11-21 13:14:55

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TRF2052PWR 数据手册

TRF2052

LOW-VOLTAGE 2-GHz SYNTHESIZER

SLWS066 – JULY 1998

PW PACKAGE

(TOP VIEW)

3-V Power Supply Operation

2-GHz Operation

Normal and Speed-Up Charge Pumps

Dual PLL: One RF and One IF

CLOCK

DATA

STROBE

VSS

RFINP

RFINN

VCCP

REFIN

VDD

NENM

LOCK

NENA

VDDA

PHP

PHI

VSSA

PHA

Additional, Directly Accessible

Power-Down Modes

description

The TRF2052 is a dual-channel, low-power,

phase-locked loop (PLL) frequency synthesizer

component designed specifically for digitally en-

hanced cordless telephone (DECT) applications.

The device is suitable for a variety of applications

AUXIN

up through 2 GHz. A speed-up integral charge pump is used for fast channel switching. The simple serial

interface is compatible with the extended performance mode (EPM) of other devices in Texas Instruments’

synthesizer family.

Along with the external loop filters, the TRF2052 provides all functions for voltage-controlled oscillators (VCO)

in a dual-PLL frequency synthesizer system. A main channel is provided for RF frequencies and an auxiliary

channel for IF frequencies. The current-output charge pumps directly drive passive RC filter networks, to

generate VCO control voltages. Fast main-channel frequency switching is achieved with a charge pump

arrangement that increases the current drive and alters the loop-filter frequency response during a portion of

the switching interval.

The speed-up mode is controlled by the serial interface strobe signal, which goes high when a new frequency

is loaded. At this time, the internal speed-up timer is activated and it enables the speed-up mode into the

speed-up timer for the preprogrammed duration. During speed-up mode, the charge pump current to the

external loop filter can be changed in two ways. First, the main charge pump current can be increased. Second,

an additional integral charge pump can be separately and directly connected to the external loop-filter capacitor

to further decrease the loop-filter charge and discharge times.

Caution. These devices have limited built-in gate protection. The leads should be shorted together or the device placed in conductive

foam during storage or handling to prevent electrostatic damage to the MOS gates.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7...9

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TRF20-687-M003AW	RCD	获取价格	Tantalum Capacitor, Polarized, Tantalum (wet), 3V, 20% +Tol, 20% -Tol, 680uF, Through Hole
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TRF-226-K050T	RCD	获取价格	Tantalum Capacitor, Polarized, Tantalum (dry/solid), 50V, 10% +Tol, 10% -Tol, 22uF, Throug
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TRF2432	TI	获取价格	Dual-Band IQ/IF TRANSCEIVER WITH DUAL VCO SYNTHESIZERS
TRF2432_07	TI	获取价格	Dual-Band IQ/IF TRANSCEIVER WITH DUAL VCO SYNTHESIZERS
TRF2432IRTQR	TI	获取价格	Dual-Band IQ/IF TRANSCEIVER WITH DUAL VCO SYNTHESIZERS

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