Datasheet > TPW65R135MFD

TPW65R135MFD

更新时间： 2024-03-03 10:08:33

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		电子
页数	文件大小	规格书
13页	1731K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件，无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

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中文翻译

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数据手册

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TPW65R135MFD 数据手册

TPB65R135MFD,TPP65R135MFD,TPW65R135MFD

Wuxi Unigroup Microelectronics Co.,Ltd

Typical Characteristics T_J= 25ºC, unless otherwise noted

Figure 1. Output Characteristics

20V

10V

5.5V

4.5V

Figure 2. Transfer Characteristics

100

V_DS= 20V

T_J= 25ºC

T_J= 150ºC

V_DS, Drain-to-Source Voltage (V)

V_GS, Gate-to-Source Voltage (V)

Figure 4. Capacitance

V_GS= 0

Figure 3. On-Resistance vs. Drain Current

0.12

10⁵

10⁴

V_GS= 10V

T_J= 25ºC

f = 1MHz

C_iss

10³

10²

10¹

10⁰

0.11

0.10

C_oss

C_rss

100

200

300

400

500

600

I_D, Drain Current (A)

V_DS, Drain-to-Source Voltage (V)

Figure 5. Gate Charge

Figure 6. Body Diode Forward Voltage

10²

10¹

10⁰

10^-1

V_DD= 120V

T_J= 125ºC

T_J= 25ºC

V_DD= 520V

0.0

0.5

1.0

1.5

Q_g, Total Gate Charge (nC)

V_SD, Source-to-Drain Voltage (V)

V1.0

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1 2 345 6 7...13

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