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TPU65R600C PDF预览

TPU65R600C

更新时间: 2024-11-08 15:17:27
品牌 Logo 应用领域
无锡紫光微 - WUXI UNIGROUP /
页数 文件大小 规格书
13页 765K
描述
超结功率 MOSFET(Super Junction MOSFET)是一种新型功率器件,采用基于电荷平衡的器件结构,导通电阻明显下降。在应用中可减小系统功率损耗并提高其转换效率,目前国际上Infi

TPU65R600C 数据手册

 浏览型号TPU65R600C的Datasheet PDF文件第2页浏览型号TPU65R600C的Datasheet PDF文件第3页浏览型号TPU65R600C的Datasheet PDF文件第4页浏览型号TPU65R600C的Datasheet PDF文件第5页浏览型号TPU65R600C的Datasheet PDF文件第6页浏览型号TPU65R600C的Datasheet PDF文件第7页 
TPA65R600C, TPB65R600C, TPC65R600C, TPD65R600C, TPP65R600C, TPU65R600C  
Wuxi Unigroup Microelectronics Company  
650V Super-Junction Power MOSFET  
FEATURES  
Very low FOM RDS(on)×Qg  
100% avalanche tested  
RoHS compliant  
APPLICATIONS  
Switch Mode Power Supply (SMPS)  
Uninterruptible Power Supply (UPS)  
Power Factor Correction (PFC)  
Device Marking and Package Information  
Device  
TPA65R600C  
TPB65R600C  
TPC65R600C  
TPD65R600C  
TO-252  
TPP65R600C  
TO-220  
TPU65R600C  
TO-251  
Package  
Marking  
TO-220F  
TO-263  
TO-262  
65R600C  
65R600C  
65R600C  
65R600C  
65R600C  
65R600C  
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted  
Value  
Parameter  
Symbol  
Unit  
TO-220, TO-251, TO-252  
TO-220F  
TO-262, TO-263  
Drain-Source Voltage (VGS = 0V)  
VDSS  
650  
V
A
TC = 25ºC  
TC = 100ºC  
7
Continuous Drain Current  
ID  
4.2  
21  
IDM  
VGSS  
EAS  
A
V
Pulsed Drain Current  
Gate-Source Voltage  
(note1)  
±30  
162  
1.4  
Single Pulse Avalanche Energy  
Avalanche Current  
(note2)  
(note1)  
mJ  
A
IAS  
MOSFET dv/dt ruggedness, VDS = 0...480V  
Reverse diode dv/dt, VDS = 0…480V, ISD ID  
Power Dissipation (TC = 25ºC )  
dv/dt  
dv/dt  
PD  
50  
V/ns  
V/ns  
W
15  
63  
28  
Operating Junction and Storage Temperature Range  
Thermal Resistance  
Parameter  
TJ, Tstg  
-55~+150  
ºC  
Value  
Symbol  
Unit  
TO-220, TO-251, TO-252  
TO-262, TO-263  
TO-220F  
4.5  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
RthJC  
RthJA  
2.0  
62  
ºC/W  
80  
V3.2  
www.tsinghuaicwx.com  
1

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