Datasheet > TPSMB8.2A-HE3/5

TPSMB8.2A-HE3/5

更新时间： 2024-12-02 06:37:43

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
3页	29K
描述
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient Suppressor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TPSMB8.2A-HE3/5 数据手册

TPSMB6.8 thru TPSMB43A

Vishay Semiconductors

formerly General Semiconductor

Surface Mount Automotive

Transient Voltage Suppressors

DO-214AA (SMB)

Breakdown Voltage 6.8 to 43V

Peak Pulse Power 600W

Cathode Band

Mounting Pad Layout

0.086 (2.20)

0.077 (1.95)

0.155 (3.94)

0.130 (3.30)

0.106 MAX

(2.69 MAX)

Dimensions in inches

and (millimeters)

0.083 MIN

(2.10 MIN)

Available in

uni-directional

only

0.180 (4.57)

0.160 (4.06)

0.050 MIN

(1.27 MIN)

0.012 (0.305)

0.006 (0.152)

0.220 REF

0.096 (2.44)

0.084 (2.13)

*Patent #’s

4,980,315

5,166,769

5,278,094

Features

0.060 (1.52)

0.030 (0.76)

0.008

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• Easy pick and place

(0.203)

Max.

0.220 (5.59)

0.205 (5.21)

• Low profile package

Mechanical Data

Case: JEDEC DO-214AA molded plastic body over

• Built-in strain relief ideal for automated placement

• Exclusive patented PAR^®oxide passivated

chip construction

• 600W peak pulse power capability with a 10/1000ms

waveform, repetition rate (duty cycle): 0.01%

• Excellent clamping capability

passivated junction

Terminals: Solder plated, solderable per

MIL-STD-750, Method 2026

Polarity: The color band denotes the cathode,

which is positive with respect to the anode under

normal TVS operation

• Low incremental surge resistance

• Very fast response time

• For devices with V

≥ 10V I is typically less

(BR)

Mounting Position: Any

Weight: 0.003 oz., 0.093 g

than 2.0mA at T = 150°C

• Designed for under the hood surface mount

applications

Packaging codes/options:

5/3.2K per 13" Reel (12mm tape), 38.4K/box

2/750 EA per 7" Reel (12mm tape), 15K/box

• High temperature soldering:

250°C/10 seconds at terminals

Maximum Ratings and Thermal Characteristics(T_A= 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak pulse power dissipation with a 10/1000µs

P_PPM

Minimum 600

waveform⁽¹⁾⁽²⁾(Fig. 1)

Peak pulse current with a 10/1000µs waveform⁽¹⁾(Fig. 3)

Peak forward surge current 8.3ms single half sine-wave⁽²⁾⁽³⁾

Instantaneous forward voltage at 50A⁽³⁾

I_PPM

I_FSM

See Next Table

3.5

V_F

Operating junction and storage temperature range

T_J, T_STG

–65 to +185

°C

Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above T_A= 25°C per Fig. 2

(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) land areas per figure

(3) Mounted on 8.3ms single half sine-wave duty cycle = 4 pulses per minute maximum

Document Number 88406

06-May-02

www.vishay.com

12 3

中文翻译

下载PDF

与TPSMB8.2A-HE3/5相关器件

型号	品牌	获取价格	描述	数据表
TPSMB8.2AHE3/52T	VISHAY	获取价格	TVS DIODE 7.02V 12.1V DO214AA
TPSMB8.2AHE3/5BT	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
TPSMB8.2A-HE3/5BT	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
TPSMB8.2AHE3_A/H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 7.02V V(RWM), Unidirectional, 1 Element, Silicon, DO
TPSMB8.2-HE3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient
TPSMB8.2-HE3/2	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient
TPSMB8.2-HE3/5	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient
TPSMB8.2HE3/52T	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
TPSMB8.2-HE3/52T	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
TPSMB8.2HE3/5BT	VISHAY	获取价格	TVS DIODE 6.63V 12.5V DO214AA

与TPSMB8.2A-HE3/5相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

TPSMB8.2A-HE3/5

TPSMB8.2A-HE3/5 数据手册

与TPSMB8.2A-HE3/5相关器件

与TPSMB8.2A-HE3/5相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TPSMB8.2A-HE3/5

TPSMB8.2A-HE3/5 数据手册

与TPSMB8.2A-HE3/5相关器件

与TPSMB8.2A-HE3/5相关文章

您还可以找

您在本页遇到什么问题？