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TPSMB82A PDF预览

TPSMB82A

更新时间: 2024-02-09 11:36:27
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网光电二极管
页数 文件大小 规格书
6页 997K
描述
Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN

TPSMB82A 技术参数

Case Style:SMBPpk(W):600
MIN_(V):77.90MAX_(V):86.10
Vwm_(V):70.1Ir_(uA):1
Ippm_(A):5.31Vc_(V):113.0
class:Diodes

TPSMB82A 数据手册

 浏览型号TPSMB82A的Datasheet PDF文件第2页浏览型号TPSMB82A的Datasheet PDF文件第3页浏览型号TPSMB82A的Datasheet PDF文件第4页浏览型号TPSMB82A的Datasheet PDF文件第5页浏览型号TPSMB82A的Datasheet PDF文件第6页 
TVS Diodes  
Surface Mount – 600W > TPSMB series  
Pb e3  
RoHS  
TPSMB Series  
Description  
Uni-directional  
Bi-directional  
TheTPSMB series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Features  
• High reliability application • Fast response time:  
and automotive grade AEC  
Q101 qualified  
typically less than 1.0ns  
from 0V to VBR min  
Agency Approvals  
• Surface mount component • Excellent clamping  
to optimize board space  
• Low profile package  
Typical failure mode is  
short from over-specified  
voltage or current  
capability  
• Low incremental surge  
resistance  
Typical IR 1µA for  
VR>10.2V  
AGENCY  
AGENCY FILE NUMBER  
E230531  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
• Whisker test is conducted • UL Recognized compound  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC-61000-4-2 ESD  
30kV(Air), 30kV (Contact)  
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2  
meeting flammability  
rating V-0  
Parameter  
Symbol  
PPPM  
Value  
600  
Unit  
W
• Meet MSL level1,  
per J-STD-020, High  
temperature soldering  
guaranteed: 260°C/10  
seconds at terminals  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
• Pb-free E3 means 2nd  
level interconnect is Pb-  
free and the terminal finish  
material is tin(Sn) (IPC/  
JEDEC J-STD-609A.01)  
Peak Pulse Power Dissipation by  
10/1000µs waveform  
(Fig.1)(Note 1), (Note 2)  
Power Dissipation on infinite heat  
sink atTL=50OC  
PM(AV)  
IFSM  
5.0  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
100  
30kV(Air), 30kV (Contact)  
Maximum Instantaneous Forward  
Voltage at 50A for Unidirectional  
only  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4  
• Glass passivated chip  
junction  
• 600W peak pulse power  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
VF  
TJ  
3.5  
V
Operating JunctionTemperature  
Range (VBR≤ 91V)  
-65 to 175  
Operating JunctionTemperature  
Range (VBR > 91V)  
°C  
TJ  
-65 to 150  
-65 to 175  
20  
StorageTemperature Range  
TSTG  
RθJL  
TypicalThermal Resistance Junction  
to Lead  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
100  
RθJA  
Notes:  
1. Non-repetitive current pulse, per Fig.4 and derated aboveTA=25ºC per Fig. 3.  
2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
component only,duty cycle=4 per minute maximum.  
4. VF < 3.5V for part number below 300A, VF < 5.0V for part number with 300A or above.  
Applications  
Functional Diagram  
TVS components are ideal for the protection of I/O  
Interfaces, VCC bus and other vulnerable circuits used in  
Automotive applications.  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2017 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 12/06/17  

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