是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | DO-214AA |
包装说明: | R-PDSO-C2 | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.73 |
Is Samacsys: | N | 其他特性: | EXCELLENT CLAMPING CAPABILITY ,HIGH RELIABILITY |
最大击穿电压: | 9.02 V | 最小击穿电压: | 7.38 V |
击穿电压标称值: | 8.2 V | 最大钳位电压: | 12.5 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-214AA |
JESD-30 代码: | R-PDSO-C2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 最大非重复峰值反向功率耗散: | 600 W |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 185 °C | 最低工作温度: | -65 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性: | UNIDIRECTIONAL | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 6.63 V | 子类别: | Transient Suppressors |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | Matte Tin (Sn) | 端子形式: | C BEND |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPSMB8.2-HE3/52T | VISHAY |
获取价格 |
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 | |
TPSMB8.2HE3/5BT | VISHAY |
获取价格 |
TVS DIODE 6.63V 12.5V DO214AA | |
TPSMB8.2HE3_A/H | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
TPSMB8.2HE3_A/I | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
TPSMB8.5A-VR | LITTELFUSE |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
TPSMB8.5CA-VR | LITTELFUSE |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 8.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
TPSMB82A | LGE |
获取价格 |
Surface Mount Transient Voltage Suppressors | |
TPSMB82A | LITTELFUSE |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
TPSMB82CA | LGE |
获取价格 |
暂无描述 | |
TPSMB82CA | LITTELFUSE |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Bidirectional, 1 Element, Silicon, DO- |