Datasheet > TPSMB7.5HE3_A/I

TPSMB7.5HE3_A/I

更新时间： 2024-12-01 09:17:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	93K
描述
Trans Voltage Suppressor Diode, 600W, 6.05V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN

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数据手册

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TPSMB7.5HE3_A/I 数据手册

TPSMB6.8 thru TPSMB43A

www.vishay.com

Vishay General Semiconductor

Surface Mount PAR^®Transient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

FEATURES

• Junction

passivation

optimized

design

passivated anisotropic rectifier technology

• T_J= 185 °C capability suitable for high reliability

and automotive requirement

• Available in uni-directional polarity only

• 600 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %

DO-214AA (SMB)

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

PRIMARY CHARACTERISTICS

V_BR

6.8 V to 43 V

• AEC-Q101 qualified

V_WM

5.50 V to 36.8 V

600 W

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

P_PPM

I_FSM

75 A

MECHANICAL DATA

T_Jmax.

Polarity

Package

185 °C

Case: DO-214AA (SMB)

Uni-directional

DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability rating

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“X” denotes revision code e.g. A, B, ..., revision code only

applicable for part number with 5 % tolerance)

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, automotive, and telecommunication.

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HE3 suffix meets JESD 201 class 2 whisker test

Polarity: color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) ⁽¹⁾⁽²⁾

Peak pulse current with a 10/1000 μs waveform (fig. 3) ⁽¹⁾

Peak forward surge current 8.3 ms single half sine-wave ⁽²⁾⁽³⁾

Maximum instantaneous forward voltage at 50 A ⁽²⁾⁽³⁾

SYMBOL

P_PPM

I_PPM

VALUE

UNIT

600

See table next page

I_FSM

V_F

3.5

Operating junction and storage temperature range

T_J, T_STG

-65 to +185

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal

Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum

(2)

(3)

Revision: 22-Jul-16

Document Number: 88406

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与TPSMB7.5HE3_A/I相关器件

型号	品牌	获取价格	描述	数据表
TPSMB70A-VR	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, 70V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
TPSMB70CA-VR	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, 70V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
TPSMB75A	LGE	获取价格	暂无描述
TPSMB75A	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, 64.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
TPSMB75A-VR	LITTELFUSE	获取价格	TVS SURF MT DO214AA AEQ101 TR
TPSMB75CA	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, 64.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-
TPSMB75CA	LGE	获取价格	Surface Mount Transient Voltage Suppressors
TPSMB75CA-VR	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, 75V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
TPSMB78A-VR	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, 78V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
TPSMB78CA-VR	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, 78V V(RWM), Bidirectional, 1 Element, Silicon, DO-21

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