Datasheet > TPSMB11A-HE3/52T

TPSMB11A-HE3/52T

更新时间： 2024-11-06 21:04:31

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
5页	78K
描述
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Transient Suppressor

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TPSMB11A-HE3/52T 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AA
包装说明：	ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.7
Is Samacsys：	N	Base Number Matches：	1

TPSMB11A-HE3/52T 数据手册

TPSMB6.8 thru TPSMB43A

Vishay General Semiconductor

Surface Mount PAR Transient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

FEATURES

• Junction passivation optimized design

passivated anisotropic rectifier technology

• T = 185 °C capability suitable for high

reliability and automotive requirement

• Available in uni-directional polarity only

• 600 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty

cycle): 0.01 %

DO-214AA (SMB)

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

PRIMARY CHARACTERISTICS

V_BR

P_PPM

I_FSM

6.8 V to 43 V

• AEC-Q101 qualified

600 W

75 A

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

T_Jmax.

185 °C

MECHANICAL DATA

Case: DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability

rating

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HE3 suffix meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

VALUE

600

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾⁽²⁾(fig. 1)

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾(fig. 3)

Peak forward surge current 8.3 ms single half sine-wave ⁽²⁾⁽³⁾

Instantaneous forward voltage at 50 A ⁽³⁾

See next table

I_FSM

V_F

3.5

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 185

°C

Notes

⁽¹⁾Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

⁽²⁾Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) land areas per figure

⁽³⁾Mounted on 8.3 ms single half sine-wave duty cycle = 4 pulses per minute maximum

Document Number: 88406

Revision: 09-Feb-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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与TPSMB11A-HE3/52T相关器件

型号	品牌	获取价格	描述	数据表
TPSMB11AHE3/5BT	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
TPSMB11A-HE3/5BT	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
TPSMB11AHE3_A/H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 9.4V V(RWM), Unidirectional, 1 Element, Silicon, DO-
TPSMB11AHE3_A/I	VISHAY	获取价格	TVS DIODE 9.4V 15.6V DO214AA
TPSMB11A-VR	LITTELFUSE	获取价格	TVS SURF MT DO214AA AEQ101 TR
TPSMB11CA	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode,
TPSMB11CA-VR	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
TPSMB11-HE3/5	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient
TPSMB11HE3/52T	VISHAY	获取价格	TVS DIODE 8.92V 16.2V DO214AA
TPSMB11-HE3/52T	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2

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