Datasheet > TPSMB120A-VR

TPSMB120A-VR

更新时间： 2024-11-07 13:45:19

品牌	Logo	应用领域
力特 - LITTELFUSE		电子局域网（LAN）标准脉冲
页数	文件大小	规格书
6页	820K
描述
TPSMB-VR系列专门用于保护敏感电子设备，使其免受雷击和其他瞬态电压事件引起的瞬态电压侵害。功能与特色: 最高脉冲峰值功率耗损为600W（10/1000μs波形）符合

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中文翻译

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TPSMB120A-VR 数据手册

TVS Diodes

Surface Mount – 600W > TTPPSSMMBB-sVeRriseesries

Pb e3

RoHS

TPSMB-VR Series

Uni-directional

Description

TheTPSMB-VR series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Bi-directional

Features

• High reliability application • Low incremental surge

and automotive grade AEC

Q101 qualiﬁed

resistance

Typical I_R≤ 1µA for V_R> 10V

•

• Surface mount component

to minimize board space

• Low proﬁle package

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• ESD protection of data

lines in accordance with

IEC 61000-4-2, 30kV(Air),

30kV (Contact)

• EFT protection of data

lines in accordance with

IEC 61000-4-4

• Glass passivated chip

junction

• High temperature

soldering guaranteed:

260°C/10 seconds at

terminals

• UL Recognized compound

meeting ﬂammability

rating V-0.

• Meet MSL level1,

per J-STD-020, high

temperature soldering

guaranteed.

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• Pb-free E3 means 2nd

level interconnect is Pb-

free and the terminal ﬁnish

material is tin(Sn) (IPC/

JEDEC J-STD-609A.01)

Agency Recognitions

AGENCY

AGENCY FILE NUMBER

E230531

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

Parameter

Symbol

Value

600

Unit

Peak Pulse Power Dissipation by

10/1000µs waveform (Fig.1)(Note 1),

(Note 2)

P_PPM

Power Dissipation on inﬁnite heat sink

atT_L=50^OC

P_M(AV)

I_FSM

V_F

5.0

100

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

Maximum Instantaneous Forward

Voltage at 50A for Unidirectional only

3.5V

• 600W peak pulse power

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Fast response time:

typically less than 1.0ns

from 0V to V_BRmin

Operating JunctionTemperature

Range (V_R≤ 78V)

T_J

-65 to 175

°C

Operating JunctionTemperature

Range (V_R>78V)

T_J

-65 to 150

-65 to 175

°C

StorageTemperature Range

T_STG

R_uJL

TypicalThermal Resistance Junction

to Lead

°C/W

• Excellent clamping

capability

TypicalThermal Resistance Junction

to Ambient

R_uJA

100

°C/W

Notes:

1. Non-repetitive current pulse per Fig. 4 and derated aboveT_A= 25^OC per Fig. 3.

2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional

component only,duty cycle=4 per minute maximum.

Applications

Functional Diagram

TVS components are ideal for the protection of I/O

Interfaces, V_CCbus and other vulnerable circuits used in

Automotive applications.

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 03/07/18

12 3 4 5 6

中文翻译

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与TPSMB120A-VR相关器件

型号	品牌	获取价格	描述	数据表
TPSMB120CA	LITTELFUSE	获取价格	TVS DIODE 102V 165V DO214AA
TPSMB120CA	LGE	获取价格	Surface Mount Transient Voltage Suppressors
TPSMB120CA-VR	LITTELFUSE	获取价格	TPSMB-VR系列专门用于保护敏感电子设备，使其免受雷击和其他瞬态电压事件引起的瞬态电压
TPSMB12A	VISHAY	获取价格	SURFACE MOUNT AUTOMOTIVE TRANSIENT VOLTAGE SUPPRESSOR
TPSMB12A	TAYCHIPST	获取价格	Surface Mount Automotive Transient Voltage Suppressors
TPSMB12A	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
TPSMB12A-1BHE3/5BT	VISHAY	获取价格	TVS DIODE 10.2V 16.7V DO214AA
TPSMB12A-E3	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA, PLASTI
TPSMB12A-HE3/2	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient
TPSMB12AHE3/52T	VISHAY	获取价格	TVS DIODE 10.2V 16.7V DO214AA

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