Datasheet > TPS281C30BRGWR

TPS281C30BRGWR

更新时间： 2023-09-03 20:34:07

品牌	Logo	应用领域
德州仪器 - TI		开关
页数	文件大小	规格书
54页	2970K
描述
可耐受 60V 电压、30mΩ、6A 单通道高侧开关 \| RGW \| 20 \| -40 to 125

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TPS281C30BRGWR 数据手册

TPS281C30

SLVSGD3A – DECEMBER 2022 – REVISED JUNE 2023

www.ti.com

7.3 Recommended Operating Conditions (continued)

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

MIN

–1

MAX

5.5

UNIT

V_SNS

T_A

Sense voltage

Operating free-air temperature

–40

125

°C

(1) All operating voltage conditions are measured with respect to device GND

(2) Device will function within extended operating range, however some parametric values might not apply

7.4 Thermal Information

TPS1HTC30

THERMAL METRIC

PWP (HTSSOP)

UNIT

14 PINS

31.5

23.8

7.4

R_θJA

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

°C/W

R_θJC(top)

R_θJB

ψ_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

0.2

ψ_JB

7.3

R_θJC(bot)

1.5

7.5 Thermal Information

TPS281C30x

PWP (HTSSOP)

THERMAL METRIC^{(1) (2)}

RGW (QFN)

20 PINS

28.9

UNIT

14 PINS

31.5

23.8

7.4

R_θJA

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

°C/W

R_θJC(top)

R_θJB

19.7

7.5

ψ_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

0.2

ψ_JB

7.5

7.3

R_θJC(bot)

0.8

1.5

(1) For more information about traditional and new thermal metrics, see the SPRA953 application report.

(2) The thermal parameters are based on a 4-layer PCB according to the JESD51-5 and JESD51-7 standards.

7.6 Electrical Characteristics

V_S= 6 V to 36 V, T_J= -40°C to 125°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VS SUPPLY VOLTAGE AND CURRENT

IL_NOM

Continuous load current V_EN= HI

T_AMB= 85°C

Total device standby

current (including

MOSFET) with

VS ≤ 36 V, V_EN

V_{DIAG_EN}= LO, V_OUT= 0 T_J= -40°C to 85°C

0.25

0.7

µA

diagnostics disabled

I_{STBY, VS}

Total device standby

current (including

MOSFET) with

VS ≤ 36 V, V_EN

V_{DIAG_EN}= LO, V_OUT= 0 T_J= 150°C

0.63

µA

diagnostics disabled

I_STBY,

V_Sstandby current with

diagnostics enabled

VS ≤ 36 V, V_EN= LO, V_{DIAG_EN}= HI, V_OUT= 0 V

V_EN= HI, V_{DIAG_EN}= LO I_OUT= 0A

1.2

1.5

1.3

VS_DIAG

V_Squiescent current with

diagnostics disabled

I_{Q, VS}

0.98

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