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TPS2819-EP PDF预览

TPS2819-EP

更新时间: 2024-11-18 04:27:35
品牌 Logo 应用领域
德州仪器 - TI 驱动器
页数 文件大小 规格书
24页 577K
描述
SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER

TPS2819-EP 数据手册

 浏览型号TPS2819-EP的Datasheet PDF文件第2页浏览型号TPS2819-EP的Datasheet PDF文件第3页浏览型号TPS2819-EP的Datasheet PDF文件第4页浏览型号TPS2819-EP的Datasheet PDF文件第5页浏览型号TPS2819-EP的Datasheet PDF文件第6页浏览型号TPS2819-EP的Datasheet PDF文件第7页 
TPS2816-EP, TPS2817-EP, TPS2818-EP  
TPS2819-EP, TPS2828-EP, TPS2829-EP  
www.ti.com  
SGDS039FEBRUARY 2008  
SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER  
1
FEATURES  
Controlled Baseline  
TPS2816, TPS2817  
TPS2818, TPS2819  
DBV PACKAGE  
(TOP VIEW)  
One Assembly Site  
One Test Site  
One Fabrication Site  
Extended Temperature Performance of –55°C  
to 125°C  
1
2
5
V
V
CC  
DD  
Enhanced Diminishing Manufacturing Sources  
(DMS) Support  
GND  
IN  
Enhanced Product-Change Notification  
3
4
OUT  
(1)  
Qualification Pedigree  
TPS2828, TPS2829  
DBV PACKAGE  
(TOP VIEW)  
Low-Cost Single-Channel High-Speed MOSFET  
Driver  
ICC . . . 15 µA Max (TPS2828, TPS2829)  
1
2
5
NC  
V
CC  
25 ns Max Rise/Fall Times and 40 ns Max  
Propagation Delay . . . 1 nF Load  
2 A Peak Output Current  
GND  
IN  
4 V to 14 V Driver Supply Voltage Range;  
Internal Regulator Extends Range to 40 V  
(TPS2816, TPS2817, TPS2818, TPS2819)  
3
4
OUT  
NC − No internal connection  
5-pin SOT-23 Package  
–55°C to 125°C Ambient-Temperature  
Operating Range  
Highly Resistant to Latch-ups  
(1) Component qualification in accordance with JEDEC and  
industry standards to ensure reliable operation over an  
extended temperature range. This includes, but is not limited  
to, Highly Accelerated Stress Test (HAST) or biased 85/85,  
temperature cycle, autoclave or unbiased HAST,  
electromigration, bond intermetallic life, and mold compound  
life. Such qualification testing should not be viewed as  
justifying use of this component beyond specified  
performance and environmental limits.  
DESCRIPTION/ORDERING INFORMATION  
The TPS28xx single-channel high-speed MOSFET drivers are capable of delivering peak currents of up to 2 A  
into highly capacitive loads. High switching speeds (tr and tf = 14 ns typ) are obtained with the use of BiCMOS  
outputs. Typical threshold switching voltages are 2/3 and 1/3 of VCC. The design inherently minimizes  
shoot-through current.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
UNLESS OTHERWISE NOTED this document contains  
Copyright © 2008, Texas Instruments Incorporated  
PRODUCTION DATA information current as of publication date.  
Products conform to specifications per the terms of Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  

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