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TPS2818MDBVREP PDF预览

TPS2818MDBVREP

更新时间： 2024-11-18 03:12:07
品牌 Logo 应用领域
德州仪器 - TI 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管信息通信管理PC
页数 文件大小 规格书
24页 577K
描述
SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER

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中文翻译

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TPS2818MDBVREP 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：SOT-23
包装说明：SOT-23, 5 PIN针数：5
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：6 weeks
风险等级：1.04Samacsys Confidence：
Samacsys Status：ReleasedSamacsys PartID：607683
Samacsys Pin Count：5Samacsys Part Category：Integrated Circuit
Samacsys Package Category：OtherSamacsys Footprint Name：SOT95P280X145-5N
Samacsys Released Date：2017-01-12 12:59:53Is Samacsys：N
高边驱动器：NO接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：R-PDSO-G5JESD-609代码：e4
长度：2.9 mm湿度敏感等级：1
功能数量：1端子数量：5
最高工作温度：125 °C最低工作温度：-55 °C
输出特性：TOTEM-POLE最大输出电流：2 A
标称输出峰值电流：2 A输出极性：INVERTED
封装主体材料：PLASTIC/EPOXY封装代码：LSSOP
封装等效代码：TSOP5/6,.11,37封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, LOW PROFILE, SHRINK PITCH峰值回流温度（摄氏度）：260
电源：10 V认证状态：Not Qualified
座面最大高度：1.45 mm子类别：MOSFET Drivers
最大压摆率：0.4 mA最大供电电压：14 V
最小供电电压：4 V标称供电电压：5 V
电源电压1-最大：40 V电源电压1-分钟：8 V
电源电压1-Nom：10 V表面贴装：YES
技术：BICMOS温度等级：MILITARY
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：0.95 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED断开时间：0.05 µs
接通时间：0.05 µs宽度：1.6 mm
Base Number Matches：1

TPS2818MDBVREP 数据手册

 浏览型号TPS2818MDBVREP的Datasheet PDF文件第2页浏览型号TPS2818MDBVREP的Datasheet PDF文件第3页浏览型号TPS2818MDBVREP的Datasheet PDF文件第4页浏览型号TPS2818MDBVREP的Datasheet PDF文件第5页浏览型号TPS2818MDBVREP的Datasheet PDF文件第6页浏览型号TPS2818MDBVREP的Datasheet PDF文件第7页 
TPS2816-EP, TPS2817-EP, TPS2818-EP  
TPS2819-EP, TPS2828-EP, TPS2829-EP  
www.ti.com  
SGDS039–FEBRUARY 2008  
SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER  
1
FEATURES  
•
Controlled Baseline  
TPS2816, TPS2817  
TPS2818, TPS2819  
DBV PACKAGE  
(TOP VIEW)  
–
–
–
One Assembly Site  
One Test Site  
One Fabrication Site  
•
•
Extended Temperature Performance of –55°C  
to 125°C  
1
2
5
V
V
CC  
DD  
Enhanced Diminishing Manufacturing Sources  
(DMS) Support  
GND  
IN  
•
•
•
Enhanced Product-Change Notification  
3
4
OUT  
(1)  
Qualification Pedigree  
TPS2828, TPS2829  
DBV PACKAGE  
(TOP VIEW)  
Low-Cost Single-Channel High-Speed MOSFET  
Driver  
•
•
ICC . . . 15 µA Max (TPS2828, TPS2829)  
1
2
5
NC  
V
CC  
25 ns Max Rise/Fall Times and 40 ns Max  
Propagation Delay . . . 1 nF Load  
•
•
2 A Peak Output Current  
GND  
IN  
4 V to 14 V Driver Supply Voltage Range;  
Internal Regulator Extends Range to 40 V  
(TPS2816, TPS2817, TPS2818, TPS2819)  
3
4
OUT  
NC − No internal connection  
•
•
5-pin SOT-23 Package  
–55°C to 125°C Ambient-Temperature  
Operating Range  
•
Highly Resistant to Latch-ups  
(1) Component qualification in accordance with JEDEC and  
industry standards to ensure reliable operation over an  
extended temperature range. This includes, but is not limited  
to, Highly Accelerated Stress Test (HAST) or biased 85/85,  
temperature cycle, autoclave or unbiased HAST,  
electromigration, bond intermetallic life, and mold compound  
life. Such qualification testing should not be viewed as  
justifying use of this component beyond specified  
performance and environmental limits.  
DESCRIPTION/ORDERING INFORMATION  
The TPS28xx single-channel high-speed MOSFET drivers are capable of delivering peak currents of up to 2 A  
into highly capacitive loads. High switching speeds (tr and tf = 14 ns typ) are obtained with the use of BiCMOS  
outputs. Typical threshold switching voltages are 2/3 and 1/3 of VCC. The design inherently minimizes  
shoot-through current.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
UNLESS OTHERWISE NOTED this document contains  
Copyright © 2008, Texas Instruments Incorporated  
PRODUCTION DATA information current as of publication date.  
Products conform to specifications per the terms of Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
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