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TPS2300IPWR PDF预览

TPS2300IPWR

更新时间： 2024-11-14 12:16:11
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德州仪器 - TI 断路器功率控制控制器
页数 文件大小 规格书
25页 456K
描述
DUAL HOT-SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

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TPS2300IPWR 数据手册

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TPS2300  
TPS2301  
www.ti.com  
SLVS265H –FEBRUARY 2000–REVISED JULY 2013  
DUAL HOT-SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND  
POWER-GOOD REPORTING  
Check for Samples: TPS2300, TPS2301  
1
FEATURES  
PW PACKAGE  
(TOP VIEW)  
•
Dual-Channel High-Side MOSFET Drivers  
IN1: 3 V to 13 V; IN2: 3 V to 5.5 V  
•
•
•
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
GATE1  
GATE2  
DGND  
TIMER  
VREG  
DISCH1  
DISCH2  
ENABLE  
PWRGD1  
FAULT  
ISET1  
ISET2  
PWRGD2  
IN2  
Output dV/dt Control Limits Inrush Current  
Circuit-Breaker With Programmable  
Overcurrent Threshold and Transient Timer  
VSENSE2  
VSENSE1  
AGND  
ISENSE2  
ISENSE1  
•
•
•
•
•
•
Power-Good Reporting With Transient Filter  
CMOS- and TTL-Compatible Enable Input  
Low, 5-μA Standby Supply Current (Max)  
Available in 20-Pin TSSOP Package  
IN1  
40°C to 85°C Ambient Temperature Range  
Electrostatic Discharge Protection  
NOTE: Terminal 18 is active high on TPS2301.  
typical application  
V
O1  
APPLICATIONS  
+
V1  
3 V − 13 V  
•
•
•
Hot-Swap/Plug/Dock Power Management  
Hot-Plug PCI, Device Bay  
IN1  
ISET1  
ISENSE1 GATE1  
DISCH1  
VSENSE1  
VREG  
Electronic Circuit Breaker  
AGND  
DGND  
TPS2300  
PWRGD1  
DESCRIPTION  
FAULT  
The TPS2300 and TPS2301 are dual-channel hot-  
swap controllers that use external N-channel  
MOSFETs as high-side switches in power  
applications. Features of these devices, such as  
overcurrent protection (OCP), inrush current control,  
output-power status reporting, and the ability to  
discriminate between load transients and faults, are  
critical requirements for hot-swap applications.  
TIMER  
PWRGD2  
ENABLE  
GATE2  
VSENSE2  
IN2  
ISET2  
ISENSE2  
DISCH2  
V
O2  
+
V2  
3 V − 5.5 V  
The TPS2300/01 devices incorporate undervoltage lockout (UVLO) and power-good (PG) reporting to ensure the  
device is off at start-up and confirm the status of the output voltage rails during operation. Each internal charge  
pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel  
MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs, reducing power  
transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent  
conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during  
power-state transitions, to disregard transients for a programmable period.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2000–2013, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
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TPS2300IPWR 替代型号

型号 品牌 替代类型 描述 数据表
TPS2300IPWG4 TI

完全替代

 DUAL HOT-SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING
TPS2300IPW TI

完全替代

 DUAL HOT-SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

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