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TPS2310_15

更新时间： 2024-11-15 02:58:15
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德州仪器 - TI 功率控制
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22页 423K
描述
DUAL HOT-SWAP POWER CONTROLLERS WITH INTERDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

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TPS2310_15 数据手册

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TPS2310, TPS2311  
DUAL HOT SWAP POWER CONTROLLER WITH INTERDEPENDENT  
CIRCUIT BREAKER AND POWER-GOOD REPORTING  
SLVS275B – FEBRUARY 2000 – REVISED APRIL 2000  
PW PACKAGE  
(TOP VIEW)  
features  
Dual-Channel High-Side MOSFET Drivers  
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
GATE1  
GATE2  
DGND  
TIMER  
VREG  
DISCH1  
DISCH2  
ENABLE  
PWRGD1  
FAULT  
ISET1  
ISET2  
PWRGD2  
IN2  
IN1: 3 V to 13 V; IN2: 3 V to 5.5 V  
Inrush Current Limiting With dv/dt Control  
Circuit-Breaker Control With Programmable  
Current Limit and Transient Timer  
VSENSE2  
VSENSE1  
AGND  
ISENSE2  
ISENSE1  
Power-Good Reporting With Transient  
Filter  
CMOS- and TTL-Compatible Enable Input  
Low, 5-µA Standby Supply Current . . . Max  
Available in 20-Pin TSSOP Package  
IN1  
NOTE: Terminal 18 is active high on TPS2311.  
–40°C to 85°C Ambient Temperature Range  
Electrostatic Discharge Protection  
typical application  
V
O1  
applications  
+
V1  
3 V – 13 V  
Hot-Swap/Plug/Dock Power Management  
Hot-Plug PCI, Device Bay  
DISCH1  
IN1  
ISET1  
GATE1  
ISENSE1  
VSENSE1  
VREG  
Electronic Circuit Breaker  
AGND  
DGND  
TPS2310  
PWRGD1  
description  
FAULT  
TIMER  
The TPS2310 and TPS2311 are dual-channel  
hot-swap controllers that use external N-channel  
MOSFETs as high-side switches in power  
applications. Features of these devices, such as  
overcurrent protection (OCP), inrush current  
control, output-power status reporting, and  
separation of load transients from actual load  
increases, are critical requirements for hot-swap  
applications.  
ENABLE  
PWRGD2  
VSENSE2  
GATE2  
IN2  
ISET2  
ISENSE2  
DISCH2  
V
O2  
+
V2  
3 V – 5.5 V  
The TPS2310/11 devices incorporate undervoltage lockout (UVLO) and power-good (PG) reporting to ensure  
the device is off at start-up and confirm the status of the output voltage rails during operation. Each internal  
charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the  
N-channel MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs,  
reducing power transients during power up/down. The circuit-breaker functionality combines the ability to sense  
overcurrentconditionswithatimerfunction;thisallowsdesignssuchasDSPs, thatmayhavehighpeakcurrents  
during power-state transitions, to disregard transients for a programmable period.  
AVAILABLE OPTIONS  
TSSOP PACKAGES (PW, PWR)  
PIN  
COUNT  
T
A
HOT-SWAP CONTROLLER DESCRIPTION  
ENABLE  
ENABLE  
Dual-channel with independent OCP and adjustable PG  
Dual-channel with interdependent OCP and adjustable PG  
Dual-channel with independent OCP  
20  
20  
16  
14  
TPS2300IPW  
TPS2310IPW  
TPS2320IPW  
TPS2330IPW  
TPS2301IPW  
TPS2311IPW  
TPS2321IPW  
TPS2331IPW  
–40°C to 85°C  
Single-channel with OCP and adjustable PG  
†
The packages are available left-end taped and reeled (indicated by the R suffix on the device type; e.g., TPS2311IPWR).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 2000, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...22

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