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TPIC5621L PDF预览

TPIC5621L

更新时间: 2024-11-30 12:22:35
品牌 Logo 应用领域
德州仪器 - TI 输出元件
页数 文件大小 规格书
13页 240K
描述
SIX-OUTPUT POWER DMOS ARRAY

TPIC5621L 数据手册

 浏览型号TPIC5621L的Datasheet PDF文件第2页浏览型号TPIC5621L的Datasheet PDF文件第3页浏览型号TPIC5621L的Datasheet PDF文件第4页浏览型号TPIC5621L的Datasheet PDF文件第5页浏览型号TPIC5621L的Datasheet PDF文件第6页浏览型号TPIC5621L的Datasheet PDF文件第7页 
ꢀ ꢁ ꢂꢃ ꢄꢅ ꢆꢇ ꢈ  
ꢉꢂ ꢊꢋꢌ ꢍꢀ ꢁꢍꢀ ꢎ ꢁꢌ ꢏ ꢐꢑꢎꢒ ꢓꢌ ꢉꢎꢔ ꢑꢑ ꢔꢕ  
SLIS033 − JUNE 1994  
Low r  
. . . 0.4 Typ  
DW PACKAGE  
(TOP VIEW)  
DS(on)  
High-Voltage Output . . . 60 V  
Pulsed Current . . . 3 A Per Channel  
Fast Commutation Speed  
DRAIN4  
GATE4  
SOURCE1  
NC  
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
SOURCE4/GND  
SOURCE5/GND  
DRAIN5  
GATE1  
DRAIN1  
DRAIN2  
description  
The TPIC5621L is a monolithic logic-level power  
DMOS-transistor array that consists of six  
N-channel  
transistors, three of which are configured with a  
common source.  
GATE5  
15 SOURCE2  
14  
13  
12  
11  
SOURCE5/GND  
SOURCE6/GND  
GATE6  
GATE2  
enhancement-mode  
DMOS  
DRAIN3  
GATE3  
DRAIN6  
SOURCE3  
The TPIC5621L is offered in a wide-body surface-  
mount (DW) package and is characterized for  
operation over the case temperature range of  
−40°C to 125°C.  
NC − No internal connection  
schematic  
SOURCE2 GATE2 DRAIN2  
15 14 16  
13  
17  
DRAIN1  
GATE1  
DRAIN3  
GATE3  
Q1  
Q3  
12  
Q2  
Z1  
D1  
Z2  
D2  
D3  
Z3  
18  
20  
1
11  
10  
SOURCE1  
DRAIN4  
SOURCE3  
DRAIN6  
Q4  
Q5  
Q6  
9
2
GATE6  
GATE4  
Z4  
Z5  
Z6  
5
DRAIN5  
GATE5  
3, 4, 7, 8  
6
GND, SOURCE4,  
SOURCE5, SOURCE6  
ꢀꢣ  
Copyright 1994, Texas Instruments Incorporated  
ꢟ ꢣ ꢠ ꢟꢘ ꢙꢭ ꢛꢚ ꢞ ꢦꢦ ꢤꢞ ꢜ ꢞ ꢝ ꢣ ꢟ ꢣ ꢜ ꢠ ꢨ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443  

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