Datasheet > TPH1400ANH

TPH1400ANH

更新时间： 2024-01-13 07:38:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	241K
描述
MOSFETs Silicon N-channel MOS (U-MOS-H)

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TPH1400ANH 数据手册

TPH1400ANH

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPH1400ANH

1. Applications

•

DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) Small, thin package

(2) High-speed switching

(3) Small gate charge: QSW = 9.4 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 11.3 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

(6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance

2012-05-10

Rev.1.0

12 3 4 5 6 7...9

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