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TPH1500CNH,L1Q PDF预览

TPH1500CNH,L1Q

更新时间: 2024-11-20 19:45:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 234K
描述
Power Field-Effect Transistor

TPH1500CNH,L1Q 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknownFactory Lead Time:12 weeks
风险等级:5.73Base Number Matches:1

TPH1500CNH,L1Q 数据手册

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TPH1500CNH  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TPH1500CNH  
1. Applications  
High-Efficiency DC-DC Converters  
Switching Voltage Regulators  
2. Features  
(1) High-speed switching  
(2) Small gate charge: QSW = 8.2 nC (typ.)  
(3) Low drain-source on-resistance: RDS(ON) = 13 m(typ.) (VGS = 10 V)  
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V)  
(5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
SOP Advance  
Start of commercial production  
2014-12  
2014-11-07  
Rev.4.0  
1

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