Datasheet > TPH1R712MD

TPH1R712MD

更新时间： 2024-09-24 14:57:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	801K
描述
P-ch MOSFET, -20 V, 0.0017 Ω@4.5V, SOP Advance, U-MOSⅥ

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TPH1R712MD 数据手册

TPH1R712MD

MOSFETs Silicon P-Channel MOS (U-MOS)

TPH1R712MD

1. Applications

•

Lithium-Ion Secondary Batteries

•

Power Management Switches

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 1.35 mΩ (typ.) (VGS = -4.5 V)

(2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V)

(3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA)

3. Packaging and Internal Circuit

1,2,3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance

4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

-20

±12

(Tc = 25  )

(t = 1 ms)

(Tc = 25  )

(t = 10 s)

(Note 1)

-60

IDP

-200

(Note 2)

(Note 3)

(Note 4)

2.8

(t = 10 s)

1.6

Single-pulse avalanche energy

Single-pulse avalanche current

Channel temperature

EAS

IAS

468

-60

Tch

Tstg

150



Storage temperature

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2014-03

Toshiba Electronic Devices & Storage Corporation

2019-10-30

Rev.5.0

12 3 4 5 6 7...9

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