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TPH12008NH PDF预览

TPH12008NH

更新时间: 2024-11-20 12:48:59
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动器转换器稳压器开关DC-DC转换器
页数 文件大小 规格书
9页 242K
描述
DC-DC Converters Switching Voltage Regulators Motor Drivers

TPH12008NH 技术参数

生命周期:Active包装说明:SMALL OUTLINE, S-PDSO-F5
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.75雪崩能效等级(Eas):58 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:80 V最大漏极电流 (ID):44 A
最大漏源导通电阻:0.0123 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PDSO-F5元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):97 A表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TPH12008NH 数据手册

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TPH12008NH  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TPH12008NH  
1. Applications  
DC-DC Converters  
Switching Voltage Regulators  
Motor Drivers  
2. Features  
(1) Small, thin package  
(2) High-speed switching  
(3) Small gate charge: QSW = 8.1 nC (typ.)  
(4) Low drain-source on-resistance: RDS(ON) = 10.1 m(typ.) (VGS = 10 V)  
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)  
(6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
SOP Advance  
2012-05-11  
Rev.1.0  
1

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