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TPH12008NH(TE12L1) PDF预览

TPH12008NH(TE12L1)

更新时间: 2024-11-20 19:50:03
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 236K
描述
TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,44A I(D),FP

TPH12008NH(TE12L1) 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.84配置:Single
最大漏极电流 (Abs) (ID):44 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):48 W
子类别:FET General Purpose Powers表面贴装:YES
Base Number Matches:1

TPH12008NH(TE12L1) 数据手册

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TPH12008NH  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TPH12008NH  
1. Applications  
DC-DC Converters  
Switching Voltage Regulators  
Motor Drivers  
2. Features  
(1) Small, thin package  
(2) High-speed switching  
(3) Small gate charge: QSW = 8.1 nC (typ.)  
(4) Low drain-source on-resistance: RDS(ON) = 10.1 m(typ.) (VGS = 10 V)  
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)  
(6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
SOP Advance  
2012-05-11  
Rev.1.0  
1

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