Datasheet > TPH12008NH(TE12L1,Q)

TPH12008NH(TE12L1,Q)

更新时间： 2024-11-05 19:50:03

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	236K
描述
TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,44A I(D),FP

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TPH12008NH(TE12L1,Q) 技术参数

TPH12008NH

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPH12008NH

1. Applications

•

DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) Small, thin package

(2) High-speed switching

(3) Small gate charge: QSW = 8.1 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 10.1 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)

(6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance

2012-05-11

Rev.1.0

12 3 4 5 6 7...9

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