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TP28F010-90

更新时间： 2024-11-07 22:06:51
品牌 Logo 应用领域
英特尔 - INTEL /
页数 文件大小 规格书
33页 894K
描述
28F010 1024K (128K X 8) CMOS FLASH MEMORY

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中文翻译

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TP28F010-90 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DIP包装说明：0.620 X 1.640 INCH, PLASTIC, DIP-32
针数：32Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.39最长访问时间：90 ns
其他特性：MINIMUM 100K ERASE/PROGRAM CYCLES命令用户界面：YES
数据轮询：NO耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-PDIP-T32JESD-609代码：e0
长度：41.91 mm内存密度：1048576 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1端子数量：32
字数：131072 words字数代码：128000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：128KX8
封装主体材料：PLASTIC/EPOXY封装代码：DIP
封装等效代码：DIP32,.6封装形状：RECTANGULAR
封装形式：IN-LINE并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：5 V
编程电压：12 V认证状态：Not Qualified
座面最大高度：4.83 mm最大待机电流：0.0001 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED切换位：NO
类型：NOR TYPE宽度：15.24 mm
Base Number Matches：1

TP28F010-90 数据手册

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E
28F010 1024K (128K X 8) CMOS  
FLASH MEMORY  
8
Flash Electrical Chip-Erase  
Command Register Architecture for  
Microprocessor/Microcontroller  
Compatible Write Interface  
1 Second Typical Chip-Erase  
Quick-Pulse Programming Algorithm  
10 µs Typical Byte-Program  
2 Second Chip-Program  
Noise Immunity Features  
±10% VCC Tolerance  
Maximum Latch-Up Immunity  
through EPI Processing  
100,000 Erase/Program Cycles  
12.0 V ±5% VPP  
ETOX™ Nonvolatile Flash Technology  
EPROM-Compatible Process Base  
High-Volume Manufacturing  
Experience  
High-Performance Read  
90 ns Maximum Access Time  
CMOS Low Power Consumption  
10 mA Typical Active Current  
50 µA Typical Standby Current  
0 Watts Data Retention Power  
JEDEC-Standard Pinouts  
32-Pin Plastic Dip  
32-Lead PLCC  
32-Lead TSOP  
(See Packaging Spec., Order #231369)  
Integrated Program/Erase Stop Timer  
Extended Temperature Options  
Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write  
random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar  
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-  
board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases  
memory flexibility, while contributing to time and cost savings.  
The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of eight bits. Intel’s 28F010 is  
offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC  
standards for byte-wide EPROMs.  
Extended erase and program cycling capability is designed into Intel's ETOX™ (EPROM Tunnel Oxide)  
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field  
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V VPP supply, the  
28F010 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse  
programming and quick-erase algorithms.  
Intel's 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds,  
low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance  
for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates into  
power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved  
through Intel's unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on  
address and data pins, from –1 V to VCC + 1 V.  
With Intel's ETOX process technology base, the 28F010 builds on years of EPROM experience to yield the  
highest levels of quality, reliability, and cost-effectiveness.  
December 1997  
Order Number: 290207-012  
1234567...33

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