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TN4033A PDF预览

TN4033A

更新时间: 2024-11-08 20:27:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
9页 446K
描述
PNP General Purpose Amplifier, TO-226 3L, 7500-BULK

TN4033A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:5.52
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):25JEDEC-95代码:TO-226
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):400 ns最大开启时间(吨):100 ns
Base Number Matches:1

TN4033A 数据手册

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TN4033A  
TO-226  
C
B
E
PNP General Purpose Amplifier  
This device is designed for general purpose amplifier and switching  
applications at currents to 500 mA and collector voltages up to 70V.  
Sourced from Process 67.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
80  
80  
V
V
V
A
5.0  
Collector Current - Continuous  
1.0  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
TN4033A  
PD  
Total Device Dissipation  
Derate above 25 C  
1.0  
8.0  
W
mW/ C  
°
°
Thermal Resistance, Junction to Case  
125  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
50  
Rθ  
C/W  
°
JA  
1997 Fairchild Semiconductor Corporation  

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