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TN4035-600G PDF预览

TN4035-600G

更新时间: 2024-09-20 03:27:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发装置可控硅整流器
页数 文件大小 规格书
5页 74K
描述
40A SCRs

TN4035-600G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:PLASTIC, D2PAK-3
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.81
Is Samacsys:N外壳连接:ANODE
配置:SINGLE关态电压最小值的临界上升速率:1000 V/us
最大直流栅极触发电流:35 mA最大直流栅极触发电压:1.3 V
最大维持电流:75 mAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3最大漏电流:4 mA
湿度敏感等级:1通态非重复峰值电流:480 A
元件数量:1端子数量:2
最大通态电流:25000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245认证状态:Not Qualified
最大均方根通态电流:40 A断态重复峰值电压:600 V
重复峰值反向电压:600 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30触发设备类型:SCR
Base Number Matches:1

TN4035-600G 数据手册

 浏览型号TN4035-600G的Datasheet PDF文件第2页浏览型号TN4035-600G的Datasheet PDF文件第3页浏览型号TN4035-600G的Datasheet PDF文件第4页浏览型号TN4035-600G的Datasheet PDF文件第5页 
TN4035-600G  
®
40A SCRs  
MAIN FEATURES:  
Symbol  
A
Value  
40  
Unit  
A
G
I
T(RMS)  
K
V
/V  
600  
35  
V
DRM RRM  
I
mA  
GT  
A
K
A
G
DESCRIPTION  
The TN4035-600G is designed for applications  
where in-rush current conditions are critical, such  
as overvoltage crowbar protection circuits in  
power supplies.  
2
D PAK  
Using clip assembly technology, provides higher  
fusing threshold than wires.  
Mounting precautions detailled in application note  
AN533 on www.st.com.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
40  
Unit  
I
RMS on-state current (180° conduction angle)  
T(RMS)  
Tc = 95°C  
Tc = 95°C  
A
A
IT  
Average on-state current (180° conduction angle)  
(AV)  
TSM  
25  
I
Non repetitive surge peak on-state  
current  
tp = 8.3 ms  
480  
460  
Tj = 25°C  
A
tp = 10 ms  
2
²
²
Tj = 25°C  
1060  
50  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 60 Hz  
tp = 20 µs  
Tj = 125°C  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
V
Tj  
V
Maximum peak reverse gate voltage  
5
RGM  
April 2004 - Ed: 3  
1/5  

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