Datasheet > TMS664164-12DGE

TMS664164-12DGE

更新时间： 2024-10-28 15:54:51

品牌	Logo	应用领域
德州仪器 - TI		动态存储器光电二极管内存集成电路
页数	文件大小	规格书
56页	929K
描述
4MX16 CACHE DRAM, 8ns, PDSO54

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TMS664164-12DGE 技术参数

生命周期：	Obsolete	包装说明：	TSOP2,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.02	风险等级：	5.84
访问模式：	FOUR BANK PAGE BURST	最长访问时间：	8 ns
JESD-30 代码：	R-PDSO-G54	长度：	22.22 mm
内存密度：	67108864 bit	内存集成电路类型：	CACHE DRAM
内存宽度：	16	功能数量：	1
端口数量：	2	端子数量：	54
字数：	4194304 words	字数代码：	4000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	4MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOP2
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE
认证状态：	Not Qualified	座面最大高度：	1.2 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	3 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	GULL WING	端子节距：	0.8 mm
端子位置：	DUAL	宽度：	10.16 mm
Base Number Matches：	1

TMS664164-12DGE 数据手册

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SMOS695A − APRIL 1998 − REVISED JULY 1998

Organization . . .

Pipeline Architecture (Single-Cycle

Architecture)

1048576 x 16 Bits x 4 Banks

2097152 x 8 Bits x 4 Banks

4194304 x 4 Bits x 4 Banks

Single Write/Read Burst

Self-Refresh Capability (Every 16 ms)

3.3-V Power Supply ( 10% Tolerance)

Low-Noise, Low-Voltage

Transistor-Transistor Logic (LVTTL)

Interface

Four Banks for On-Chip Interleaving for

x8/x16 (Gapless Access) Depending on

Organizations

Power-Down Mode

High Bandwidth − Up to 125-MHz Data

Rates

Compatible With JEDEC Standards

16K RAS-Only Refresh (Total for All Banks)

4K Auto Refresh (Total for All Banks)/64 ms

Burst Length Programmable to 1, 2, 4, 8

Programmable Output Sequence − Serial or

Interleave

Automatic Precharge and Controlled

Precharge

Chip-Select and Clock-Enable for

Enhanced-System Interfacing

Burst Interruptions Supported:

− Read Interruption

− Write Interruption

Cycle-by-Cycle DQ Bus Mask Capability

Only x16 SDRAM Configuration Supports

Upper-/Lower-Byte Masking Control

− Precharge Interruption

Support Clock-Suspend Operation (Hold

Command)

Programmable CAS Latency From Column

Address

Intel PC100 Compliant (-8 and -8A parts)

Performance Ranges:

SYNCHRONOUS

CLOCK CYLE

TIME

ACCESS TIME

CLOCK TO

OUTPUT

REFRESH

INTERVAL

REF

CK3

CK2

AC3

AC2

’664xx4-8

’664xx4-8A

’664xx4-10

8 ns

10 ns

15 ns

6 ns

64 ms

7.5 ns

10 ns

7.5 ns

description

The TMS664xx4 series are 67108864-bit synchronous dynamic random-access memory (SDRAM) devices

which are organized as follow:

Four banks of 1 048 576 words with 16 bits per word

Four banks of 2097152 words with 8 bits per word

Four banks of 4194304 words with 4 bits per word

All inputs and outputs of the TMS664xx4 series are compatible with the LVTTL interface.

The SDRAM employs state-of-the-art technology for high-performance, reliability, and low power. All inputs and

outputs are synchronized with the CLK input to simplify system design and to enhance use with high-speed

microprocessors and caches.

The TMS664xx4 SDRAM is available in a 400-mil, 54-pin surface-mount thin small-outline package (TSOP)

(DGE suffix).

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

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POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443

12 3 4 5 6 7...56

中文翻译

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与TMS664164-12DGE相关器件

型号	品牌	获取价格	描述	数据表
TMS664164-12DGER	TI	获取价格	4MX16 CACHE DRAM, 8ns, PDSO54, PLASTIC, TSOP2-54
TMS6641648	TI	获取价格	4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RA
TMS6641648A	TI	获取价格	4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RA
TMS664164-8ADGE	TI	获取价格	4MX16 SYNCHRONOUS DRAM, 6ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54
TMS664164-8DGE	TI	获取价格	4MX16 SYNCHRONOUS DRAM, 6ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54
TMS664164DGE-10	TI	获取价格	4MX16 SYNCHRONOUS DRAM, 7.5ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54
TMS664164DGE-8	TI	获取价格	4MX16 SYNCHRONOUS DRAM, 6ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54
TMS664164DGE-8A	ETC	获取价格	SDRAM\|4X1MX16\|CMOS\|TSOP\|54PIN\|PLASTIC
TMS664414	TI	获取价格	4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RA
TMS66441410	TI	获取价格	4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RA

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