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TMS27PC512-20FME PDF预览

TMS27PC512-20FME

更新时间: 2024-11-30 22:42:07
品牌 Logo 应用领域
德州仪器 - TI 存储内存集成电路PC可编程只读存储器OTP只读存储器
页数 文件大小 规格书
13页 187K
描述
TMS27PC512 65536 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES

TMS27PC512-20FME 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFN
包装说明:0.050 INCH PITCH, PLASTIC PACKAGE-32针数:32
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.52
Is Samacsys:N最长访问时间:200 ns
I/O 类型:COMMONJESD-30 代码:R-PQCC-J32
长度:13.97 mm内存密度:524288 bit
内存集成电路类型:OTP ROM内存宽度:8
功能数量:1端子数量:32
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:3.56 mm最大待机电流:0.00025 A
子类别:OTP ROMs最大压摆率:0.03 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:11.43 mmBase Number Matches:1

TMS27PC512-20FME 数据手册

 浏览型号TMS27PC512-20FME的Datasheet PDF文件第2页浏览型号TMS27PC512-20FME的Datasheet PDF文件第3页浏览型号TMS27PC512-20FME的Datasheet PDF文件第4页浏览型号TMS27PC512-20FME的Datasheet PDF文件第5页浏览型号TMS27PC512-20FME的Datasheet PDF文件第6页浏览型号TMS27PC512-20FME的Datasheet PDF文件第7页 
TMS27C512 65536 BY 8-BIT UV ERASABLE  
TMS27PC512 65536 BY 8-BIT  
PROGRAMMABLE READ-ONLY MEMORIES  
SMLS512G – NOVEMBER 1985 – REVISED SEPTEMBER 1997  
J PACKAGE  
(TOP VIEW)  
Organization . . . 65536 by 8 Bits  
Single 5-V Power Supply  
Pin Compatible With Existing 512K MOS  
ROMs, PROMs, and EPROMs  
A15  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
V
CC  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
A14  
A13  
A8  
2
All Inputs/Outputs Fully TTL Compatible  
Max Access/Min Cycle Time  
3
4
A9  
5
V
± 10%  
CC  
A11  
G/V  
A10  
E
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
6
’27C/PC512-10  
’27C/PC512-12  
’27C/PC512-15  
’27C/PC512-20  
’27C/PC512-25  
100 ns  
120 ns  
150 ns  
200 ns  
250 ns  
7
PP  
8
9
A0  
10  
11  
12  
13  
14  
DQ0  
DQ1  
DQ2  
GND  
Power Saving CMOS Technology  
Very High-Speed SNAP! Pulse  
Programming  
3-State Output Buffers  
400-mV Minimum DC Noise Immunity With  
Standard TTL Loads  
FM PACKAGE  
(TOP VIEW)  
Latchup Immunity of 250 mA on All Input  
and Output Lines  
Low Power Dissipation ( V  
= 5.25 V )  
CC  
4
3 2 1 32 31 30  
– Active . . . 158 mW Worst Case  
– Standby . . . 1.4 mW Worst Case  
(CMOS Input Levels)  
5
6
7
8
9
29  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
NC  
DQ0  
A8  
A9  
A11  
28  
27  
Temperature Range Options  
26 NC  
512K EPROM Available With MIL-STD-883C  
Class B High Reliability Processing  
(SMJ27C512)  
G/V  
A10  
E
DQ7  
DQ6  
25  
24  
23  
22  
21  
PP  
10  
11  
12  
13  
description  
14 15 16 17 18 19 20  
The TMS27C512 series are 65536 by 8-bit  
(524288-bit), ultraviolet (UV) light erasable,  
electrically programmable read-only memories  
(EPROMs).  
PIN NOMENCLATURE  
The TMS27PC512 series are 65536 by 8-bit  
(524288-bit), one-time programmable (OTP)  
electrically programmable read-only memories  
(PROMs).  
A0A15  
E
Address Inputs  
Chip Enable/Power Down  
DQ0DQ7  
Inputs (programming)/Outputs  
13-V Programming Power Supply  
Ground  
G/V  
PP  
GND  
NC  
No Internal Connection  
Make No External Connection  
5-V Power Supply  
NU  
V
CC  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443  

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