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TMS27PC020-20FME PDF预览

TMS27PC020-20FME

更新时间: 2024-11-06 04:27:55
品牌 Logo 应用领域
德州仪器 - TI 存储内存集成电路OTP只读存储器
页数 文件大小 规格书
15页 195K
描述
READ-ONLY MEMORIES

TMS27PC020-20FME 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFJ包装说明:1.25 MM PITCH, PLASTIC, LCC-32
针数:32Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.61Is Samacsys:N
最长访问时间:200 nsI/O 类型:COMMON
JESD-30 代码:R-PQCC-J32长度:13.97 mm
内存密度:2097152 bit内存集成电路类型:OTP ROM
内存宽度:8功能数量:1
端子数量:32字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:3.56 mm
最大待机电流:0.0001 A子类别:OTP ROMs
最大压摆率:0.03 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:11.43 mm
Base Number Matches:1

TMS27PC020-20FME 数据手册

 浏览型号TMS27PC020-20FME的Datasheet PDF文件第2页浏览型号TMS27PC020-20FME的Datasheet PDF文件第3页浏览型号TMS27PC020-20FME的Datasheet PDF文件第4页浏览型号TMS27PC020-20FME的Datasheet PDF文件第5页浏览型号TMS27PC020-20FME的Datasheet PDF文件第6页浏览型号TMS27PC020-20FME的Datasheet PDF文件第7页 
TMS27C020 262144 BY 8-BIT UV ERASABLE  
TMS27PC020 262144 BY 8-BIT  
PROGRAMMABLE READ-ONLY MEMORIES  
SMLS020C – NOVEMBER 1990 – REVISED SEPTEMBER 1997  
J PACKAGE  
(TOP VIEW)  
Organization . . . 262144 by 8 Bits  
Single 5-V Power Supply  
V
V
CC  
Operationally Compatible With Existing  
Megabit EPROMs  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
PP  
A16  
A15  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
PGM  
A17  
A14  
A13  
A8  
A9  
A11  
G
2
3
Industry Standard 32-Pin Dual-In-line  
Package and 32-Lead Plastic Leaded Chip  
Carrier  
4
5
6
All Inputs/Outputs Fully TTL Compatible  
7
±10% V  
Tolerance  
CC  
8
Max Access/Min Cycle Time  
± 10%  
9
V
A10  
E
10  
11  
12  
13  
14  
15  
16  
CC  
’27C/PC020-10  
’27C/PC020-12  
’27C/PC020-15  
’27C/PC020-20  
’27C/PC020-25  
100 ns  
120 ns  
150 ns  
200 ns  
250 ns  
A0  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
DQ0  
DQ1  
DQ2  
GND  
8-Bit Output For Use in  
Microprocessor-Based Systems  
Very High-Speed SNAP! Pulse  
Programming  
TMS27PC020  
FM PACKAGE  
(TOP VIEW)  
Power Saving CMOS Technology  
3-State Output Buffers  
400 mV Minimum DC Noise Immunity With  
Standard TTL Loads  
4
3 2 1 32 31 30  
A7  
A6  
A14  
5
29  
Latchup Immunity of 250 mA on All Input  
and Output Pins  
6
28 A13  
27 A8  
26 A9  
A5  
7
No Pullup Resistors Required  
A4  
8
9
25  
24  
23  
22  
21  
A3  
A11  
G
Low Power Dissipation (V  
= 5.5 V)  
CC  
10  
11  
12  
13  
A2  
– Active . . . 165 mW Worst Case  
– Standby . . . 0.55 mW Worst Case  
(CMOS-Input Levels)  
A1  
A10  
E
A0  
DQ0  
DQ7  
Temperature Range Options  
14 15 16 17 18 19 20  
description  
The TMS27C020 series are 262144 by 8-bit  
(2097152-bit), ultraviolet (UV) light erasable,  
electrically programmable read-only memories  
(EPROMs).  
PIN NOMENCLATURE  
A0A17  
Address Inputs  
DQ0DQ7  
Inputs (programming)/Outputs  
Chip Enable  
E
G
GND  
PGM  
Output Enable  
Ground  
Program  
5-V Power Supply  
13-V Power Supply  
The TMS27PC020 series are one-time program-  
mable (OTP) electrically programmable read-only  
memories (PROMs).  
V
CC  
V
PP  
† Only in program mode  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443  

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