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TMS27C256-10JE4 PDF预览

TMS27C256-10JE4

更新时间: 2024-11-09 19:59:51
品牌 Logo 应用领域
德州仪器 - TI 可编程只读存储器内存集成电路
页数 文件大小 规格书
13页 202K
描述
32KX8 UVPROM, 100ns, CDIP28, 0.600 INCH, WINDOWED, CERDIP-28

TMS27C256-10JE4 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIP包装说明:0.600 INCH, WINDOWED, CERDIP-28
针数:28Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.61
风险等级:5.64Is Samacsys:N
最长访问时间:100 nsI/O 类型:COMMON
JESD-30 代码:R-CDIP-T28长度:36.83 mm
内存密度:262144 bit内存集成电路类型:UVPROM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8输出特性:3-STATE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:WDIP
封装等效代码:DIP28,.6封装形状:RECTANGULAR
封装形式:IN-LINE, WINDOW并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:13 V认证状态:Not Qualified
座面最大高度:4.91 mm最大待机电流:0.00025 A
子类别:EPROMs最大压摆率:0.03 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:15.24 mmBase Number Matches:1

TMS27C256-10JE4 数据手册

 浏览型号TMS27C256-10JE4的Datasheet PDF文件第2页浏览型号TMS27C256-10JE4的Datasheet PDF文件第3页浏览型号TMS27C256-10JE4的Datasheet PDF文件第4页浏览型号TMS27C256-10JE4的Datasheet PDF文件第5页浏览型号TMS27C256-10JE4的Datasheet PDF文件第6页浏览型号TMS27C256-10JE4的Datasheet PDF文件第7页 
ꢁꢂ ꢃ ꢄ ꢅꢃ ꢆ ꢇ ꢈ ꢃ ꢄ ꢇ ꢉ ꢊꢋ ꢉ ꢌꢊꢍ ꢀ ꢎꢏ ꢐꢑ ꢒꢂ ꢒ ꢊꢓ ꢐ  
ꢀ ꢁꢂ ꢃ ꢄ ꢔꢅꢃ ꢆ ꢇ ꢈ ꢃ ꢄ ꢇ ꢉ ꢊ ꢋ ꢉꢌ ꢊ ꢍꢀ  
SMLS256H− SEPTEMBER 1984 − REVISED NOVEMBER 1997  
D
D
D
Organization . . . 32768 by 8 Bits  
Single 5-V Power Supply  
J PACKAGE  
(TOP VIEW)  
Pin Compatible With Existing 256K MOS  
ROMs, PROMs, and EPROMs  
V
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ0  
DQ1  
DQ2  
GND  
V
CC  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
PP  
A14  
A13  
A8  
A9  
A11  
G
2
D
All Inputs /Outputs Fully TTL Compatible  
Max Access/Min Cycle Time  
3
D
4
V
10%  
5
CC  
6
’27C/PC256-10  
’27C/PC256-12  
’27C/PC256-15  
’27C/PC256-17  
’27C/PC256-20  
’27C/PC256-25  
100 ns  
120 ns  
150 ns  
170 ns  
200 ns  
250 ns  
7
A10  
E
8
9
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
10  
11  
12  
13  
14  
D
D
Power Saving CMOS Technology  
Very High-Speed SNAP! Pulse  
Programming  
D
3-State Output Buffers  
FM PACKAGE  
(TOP VIEW)  
D
400-mV Minimum DC Noise Immunity With  
Standard TTL Loads  
D
D
Latchup Immunity of 250 mA on All Input  
and Output Lines  
4
3 2 1 32 31 30  
Low Power Dissipation (V  
= 5.5 V)  
CC  
5
6
7
8
9
29  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
NC  
A8  
A9  
A11  
− Active . . . 165 mW Worst Case  
− Standby . . . 1.4 mW Worst Case  
(CMOS Input Levels)  
28  
27  
26 NC  
D
D
Temperature Range Options  
G
A10  
E
DQ7  
DQ6  
25  
24  
23  
22  
21  
256K EPROM Available With MIL-STD-883C  
Class B High Reliability Processing  
(SMJ27C256)  
10  
11  
12  
13  
DQ0  
description  
14 15 16 17 18 19 20  
The TMS27C256 series are 32768 by 8-bit  
(262144-bit), ultraviolet (UV) light erasable,  
electrically programmable read-only memories  
(EPROMs).  
PIN NOMENCLATURE  
The TMS27PC256 series are 32768 by 8-bit  
(262144-bit), one-time programmmable (OTP)  
electrically programmable read-only memories  
(PROMs).  
A0A14  
DQ0DQ7  
E
G
GND  
NC  
NU  
Address Inputs  
Inputs (programming)/Outputs  
Chip Enable/Powerdown  
Output Enable  
Ground  
No Internal Connection  
Make No External Connection  
5-V Power Supply  
V
CC  
V
PP  
13-V Power Supply  
Only in program mode  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
ꢀꢤ  
Copyright 1997, Texas Instruments Incorporated  
ꢠ ꢤ ꢡ ꢠꢙ ꢚꢮ ꢜꢛ ꢟ ꢧꢧ ꢥꢟ ꢝ ꢟ ꢞ ꢤ ꢠ ꢤ ꢝ ꢡ ꢩ  
1
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443  

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