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TLV2252MJGB

更新时间： 2024-11-20 04:25:19
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路
页数 文件大小 规格书
53页 1231K
描述
ADVANCED LINCMOS RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS

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TLV2252MJGB 技术参数

生命周期：Active零件包装代码：DIP
包装说明：DIP-8针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.33.00.01Factory Lead Time：6 weeks
风险等级：5.63Is Samacsys：N
放大器类型：OPERATIONAL AMPLIFIER架构：VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：0.001 µA25C 时的最大偏置电流 (IIB)：0.00006 µA
最小共模抑制比：70 dB标称共模抑制比：83 dB
频率补偿：YES最大输入失调电流 (IIO)：0.00006 µA
最大输入失调电压：1500 µVJESD-30 代码：R-GDIP-T8
长度：9.58 mm低-偏置：YES
低-失调：NO微功率：YES
功能数量：2端子数量：8
最高工作温度：125 °C最低工作温度：-55 °C
封装主体材料：CERAMIC, GLASS-SEALED封装代码：DIP
封装等效代码：DIP8,.3封装形状：RECTANGULAR
封装形式：IN-LINE包装方法：TUBE
峰值回流温度（摄氏度）：NOT SPECIFIED功率：NO
电源：+-1.35/+-4/2.7/8 V可编程功率：NO
认证状态：Not Qualified筛选级别：MIL-STD-883
座面最大高度：5.08 mm最小摆率：0.05 V/us
标称压摆率：0.12 V/us子类别：Operational Amplifier
最大压摆率：0.125 mA供电电压上限：8 V
标称供电电压 (Vsup)：3 V表面贴装：NO
技术：CMOS温度等级：MILITARY
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
标称均一增益带宽：200 kHz最小电压增益：10000
宽带：NO宽度：7.62 mm
Base Number Matches：1

TLV2252MJGB 数据手册

 浏览型号TLV2252MJGB的Datasheet PDF文件第2页浏览型号TLV2252MJGB的Datasheet PDF文件第3页浏览型号TLV2252MJGB的Datasheet PDF文件第4页浏览型号TLV2252MJGB的Datasheet PDF文件第5页浏览型号TLV2252MJGB的Datasheet PDF文件第6页浏览型号TLV2252MJGB的Datasheet PDF文件第7页 
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SLOS185D − FEBRUARY 1997 − REVISED AUGUST 2006  
D Output Swing Includes Both Supply Rails  
D Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz  
D Low Input Bias Current . . . 1 pA Typ  
D Low Input Offset Voltage  
850 µV Max at T = 25°C  
A
D Wide Supply Voltage Range  
2.7 V to 8 V  
D Fully Specified for Both Single-Supply and  
D Macromodel Included  
Split-Supply Operation  
D Available in Q-Temp Automotive  
HighRel Automotive Applications  
Configuration Control / Print Support  
Qualification to Automotive Standards  
D Very Low Power . . . 34 µA Per Channel Typ  
D Common-Mode Input Voltage Range  
Includes Negative Rail  
description  
HIGH-LEVEL OUTPUT VOLTAGE  
vs  
HIGH-LEVEL OUTPUT CURRENT  
The TLV2252 and TLV2254 are dual and  
quadruple low-voltage operational amplifiers from  
Texas Instruments. Both devices exhibit rail-to-rail  
output performance for increased dynamic range  
in single- or split-supply applications. The  
TLV225x family consumes only 34 µA of supply  
current per channel. This micropower operation  
makes them good choices for battery-powered  
applications. This family is fully characterized at  
3 V and 5 V and is optimized for low-voltage  
applications. The noise performance has been  
dramatically improved over previous generations  
of CMOS amplifiers. The TLV225x has a noise  
level of 19 nV/√Hz at 1kHz, four times lower than  
competitive micropower solutions.  
3
V
= 3 V  
DD  
2.5  
2
T
= −40°C  
A
T
= 25°C  
A
1.5  
1
T
= 85°C  
A
T
= 125°C  
A
0.5  
0
The TLV225x, exhibiting high input impedance  
and low noise, are excellent for small-signal  
conditioning for high-impedance sources, such as  
piezoelectric transducers. Because of the micro-  
power dissipation levels combined with 3-V  
operation, these devices work well in hand-held  
monitoring and remote-sensing applications. In  
0
200  
400  
600  
800  
| I  
OH  
| − High-Level Output Current − µA  
Figure 1  
addition, the rail-to-rail output feature with single or split supplies makes this family a great choice when  
interfacing with analog-to-digital converters (ADCs). For precision applications, the TLV225xA family is  
available and has a maximum input offset voltage of 850 µV.  
The TLV2252/4 also make great upgrades to the TLV2322/4 in standard designs. They offer increased output  
dynamic range, lower noise voltage, and lower input offset voltage. This enhanced feature set allows them to  
be used in a wider range of applications. For applications that require higher output drive and wider input voltage  
range, see the TLV2432 and TLV2442 devices. If your design requires single amplifiers, please see the  
TLV2211/21/31 family. These devices are single rail-to-rail operational amplifiers in the SOT-23 package. Their  
small size and low power consumption, make them ideal for high density, battery-powered equipment.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Advanced LinCMOS is a trademark of Texas Instruments.  
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Copyright 1997−2006, Texas Instruments Incorporated  
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1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...53

中文翻译

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