生命周期: | Obsolete | 零件包装代码: | DFP |
包装说明: | CERAMIC, DFP-10 | 针数: | 10 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.68 |
Is Samacsys: | N | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 0.001 µA |
25C 时的最大偏置电流 (IIB): | 0.00006 µA | 标称共模抑制比: | 75 dB |
频率补偿: | YES | 最大输入失调电压: | 1750 µV |
JESD-30 代码: | S-GDFP-F10 | 长度: | 6.475 mm |
低-偏置: | YES | 低-失调: | NO |
微功率: | YES | 负供电电压上限: | |
标称负供电电压 (Vsup): | 功能数量: | 2 | |
端子数量: | 10 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | CERAMIC, GLASS-SEALED |
封装代码: | DFP | 封装等效代码: | FL10,.24 |
封装形状: | RECTANGULAR | 封装形式: | FLATPACK |
电源: | +-1.35/+-4/2.7/8 V | 认证状态: | Not Qualified |
座面最大高度: | 2.03 mm | 最小摆率: | 0.05 V/us |
标称压摆率: | 0.1 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 0.15 mA | 供电电压上限: | 8 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | MILITARY |
端子形式: | FLAT | 端子节距: | 1.27 mm |
端子位置: | DUAL | 标称均一增益带宽: | 187 kHz |
最小电压增益: | 10000 | 宽度: | 6.225 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TLV2252MUB | TI |
获取价格 |
ADVANCED LINCMOS RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2252-Q1 | TI |
获取价格 |
Advanced LinCMOS⢠RAIL-TO-RAIL VERY LOW-POW | |
TLV2252QD | TI |
获取价格 |
Advanced LinCMOSE RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2252QDG4 | TI |
获取价格 |
Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER POERATIONAL AMPLIFIERS | |
TLV2252QDR | TI |
获取价格 |
Advanced LinCMOSE RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2252QDREP | TI |
获取价格 |
Advanved LinCMOS⢠RAIL-TO-RAIL VERY-LOW-POW | |
TLV2252QDRG4 | TI |
获取价格 |
Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER POERATIONAL AMPLIFIERS | |
TLV2252QDRG4Q1 | TI |
获取价格 |
Advanced LinCMOS⢠RAIL-TO-RAIL VERY LOW-POW | |
TLV2252QDRQ1 | TI |
获取价格 |
Advanced LinCMOS⢠RAIL-TO-RAIL VERY LOW-POW | |
TLV2254 | TI |
获取价格 |
高级 LinCMOS 轨到轨、超低功耗、四路运算放大器 |