是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOIC |
包装说明: | SOIC-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 1.19 |
放大器类型: | OPERATIONAL AMPLIFIER | 架构: | VOLTAGE-FEEDBACK |
最大平均偏置电流 (IIB): | 0.00006 µA | 25C 时的最大偏置电流 (IIB): | 0.00006 µA |
最小共模抑制比: | 70 dB | 标称共模抑制比: | 83 dB |
频率补偿: | YES | 最大输入失调电流 (IIO): | 0.00006 µA |
最大输入失调电压: | 1500 µV | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e4 | 长度: | 4.9 mm |
低-偏置: | YES | 低-失调: | NO |
微功率: | YES | 湿度敏感等级: | 1 |
功能数量: | 2 | 端子数量: | 8 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装等效代码: | SOP8,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 包装方法: | TR |
峰值回流温度(摄氏度): | 260 | 功率: | NO |
电源: | 3/5 V | 可编程功率: | NO |
认证状态: | Not Qualified | 筛选级别: | AEC-Q100 |
座面最大高度: | 1.75 mm | 最小摆率: | 0.05 V/us |
标称压摆率: | 0.12 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 0.125 mA | 供电电压上限: | 16 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | AUTOMOTIVE |
端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 标称均一增益带宽: | 200 kHz |
最小电压增益: | 10000 | 宽带: | NO |
宽度: | 3.91 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
TLV2252AQDRG4 | TI |
完全替代 |
Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER POERATIONAL AMPLIFIERS | |
TLV2252AID | TI |
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Advanced LinCMOSE RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2252AIDR | TI |
类似代替 |
Advanced LinCMOSE RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS |
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