TLP591B(F)

更新时间： 2024-11-09 13:14:47

品牌	Logo	应用领域
东芝 - TOSHIBA		光电光电器件二极管光电二极管
页数	文件大小	规格书
4页	147K
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中文翻译

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数据手册

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TLP591B(F) 数据手册

TLP591B

TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array

TLP591B

Unit in mm

Telecommunication

Programmable Controllers

MOS Gate Driver

MOS FET Gate Driver

The TOSHIBA TLP591B consists of an aluminum galium arsenide

infrared emitting diode optically coupled to a series connected

photo−diode array in a six lead plastic DIP package.

TLP591B is suitable for MOS FET gate driver.

TLP591B has an internal shunt resistor to optimize switching speed.

UL recognized: UL1577, file no. E67349

TOSHIBA

11−7A9

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Forward current

Forward current derating

∆I /°C

-0.5

mA /°C

(Ta ≥ 25°C)

Pulse forward current

(100µs pulse, 100pps)

Pin Configuration (top view)

Reverse voltage

Junction temperature

Forward current

125

°C

µA

Reverse voltage

Junction temperature

Storage temperature range

Operating temperature range

Lead soldering temperature (10 sec.)

Isolation voltage

125

°C

-55~125

-40~85

260

stg

opr

1. : Anode

2. : Cathode

3. : NC

sol

4. : Cathode

6. : Anode

2500

rms

(AC, 1 min., R.H.≤ 60%)

(Note 1)

(Note 1) Device considered a two terminal device: Pins 1, 2 and 3

shorted together, and pins 4 and 6 shorted together.

2002-09-25

12 3 4

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