Datasheet > TLP3475S(TP,E

TLP3475S(TP,E

更新时间： 2024-11-05 19:11:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
14页	406K
描述
Transistor Output SSR

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技术参数
数据手册

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TLP3475S(TP,E 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	1.51
Base Number Matches：	1

TLP3475S(TP,E 数据手册

TLP3475S

Photocouplers Photorelay

TLP3475S

1. Applications

•

Measuring Instruments

High-Speed Memory Testers

High-Speed Logic IC Testers

ATE (Automatic Test Equipment)

Probe Cards

2. General

The TLP3475S photorelay consists of a photo MOSFET optically coupled to an infrared light emitting diode. It

is housed in a S-VSON4 package. The TLP3475S features a low CR product and extremely low on-state resistance,

and thus delivers high on-state current. Additionally, the TLP3475S offers low insertion loss of a high-frequency

signal and thus prevents the degradation of a rapidly rising signal. The TLP3475S also features low off-state

currentandlowoutputpincapacitance, makingitsuitableforhigh-frequencymeasuringinstrumentapplications.

3. Features

(1) S-VSON4: height = 1.75 mm (max), area = 1.45 mm × 2.0 mm (typ.)

(2) Normally opened (1-Form-A)

(3) OFF-state output terminal voltage: 60 V (min)

(4) Trigger LED current: 3.0 mA (max)

(5) ON-state current: 0.4 A (max)

(6) ON-state resistance: 1.5 Ω (max)

(7) Output capacitance: 12 pF (typ.), 20 pF (max)

(8) Isolation voltage: 500 Vrms (min)

(9) Halogen-free

For details, see "Devices in Halogen-Free Resin Packages" at the end of this datasheet.

4. Packaging and Pin Assignment

1: Anode

2: Cathode

3: Drain

4: Drain

11-2E1A

Start of commercial production

2017-03

Toshiba Electronic Devices & Storage Corporation

2017-10-18

Rev.3.0

12 3 4 5 6 7...14

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