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TLP350_07 PDF预览

TLP350_07

更新时间: 2024-11-13 03:59:23
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 274K
描述
GaAГAs IRED + Photo IC

TLP350_07 数据手册

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TLP350  
TOSHIBA Photocoupler GaAAs IRED + Photo IC  
TLP350  
Industrial Inverter  
Inverter for Air Conditioner  
IGBT/Power MOSFET Gate Drive  
IH(Induction Heating)  
Unit: mm  
The TOSHIBA TLP350 consists of a GaAAs light-emitting diode and an  
integrated photodetector.  
This unit is an 8-lead DIP package.  
The TLP350 is suitable for gate driving IGBTs or power MOSFETs.  
Peak output current : IO = ±2.5A (max)  
Guaranteed performance over temperature : 40 to 100°C  
Supply current : ICC = 2 mA (max)  
Power supply voltage: VCC = 15 to 30 V  
Threshold input current : I  
= 5 mA (max)  
FLH  
Switching time (t  
/t  
) : 500 ns (max)  
pLH pHL  
Common mode transient immunity : 15 kV/μs  
Isolation voltage : 3750 Vrms  
UL Recognized : UL1577,File No.E67349  
Option(D4)  
TOSHIBA  
11-10C4  
VDE Approved : DIN EN 60747-5-2  
Maximum Operating Insulation Voltage : 890VPK  
Weight: 0.54 g (typ.)  
Highest Permissible Over Voltage  
: 6000VPK  
(Note):When a EN 60747-5-2 approved type is needed,  
Please designate “Option(D4)”  
Truth Table  
Pin Configuration (top view)  
1: NC  
1
2
3
4
8
7
6
5
Input  
LED  
Tr1  
Tr2  
Output  
2: Anode  
3: Cathode  
4: NC  
H
L
ON  
ON  
OFF  
ON  
H
L
OFF  
OFF  
5: GND  
6: V (output)  
O
7: NC  
8: V  
CC  
Schematic  
I
CC  
8
V
CC  
(Tr1)  
(Tr2)  
I
F
2+  
I
V
O
F
6
V
3−  
O
5
GND  
A 0.1 μF bypass capacitor must be connected  
between pins 8 and 5. (See Note 6)  
1
2007-10-01  

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