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TLP190B PDF预览

TLP190B

更新时间: 2024-11-17 22:42:07
品牌 Logo 应用领域
东芝 - TOSHIBA 光电光电器件二极管光电二极管
页数 文件大小 规格书
5页 125K
描述
TOSHIBA Photocoupler GaAAs Ired & Photo−Diode Array

TLP190B 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:11-4C1, MINIFLAT-6/4
Reach Compliance Code:compliantHTS代码:8541.40.80.00
风险等级:5Is Samacsys:N
其他特性:UL RECOGNISED配置:SINGLE
安装特点:SURFACE MOUNT端子数量:4
最高工作温度:85 °C最低工作温度:-40 °C
光电设备类型:OPTOELECTRONIC DEVICE表面贴装:YES
Base Number Matches:1

TLP190B 数据手册

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TLP190B  
TOSHIBA Photocoupler GaAAs Ired & PhotoDiode Array  
TLP190B  
Telecommunication  
Programmable Controllers  
MOS Gate Driver  
Unit in mm  
MOS FET Gate Driver  
The TOSHIBA mini flat coupler TLP190B is a small outline coupler,  
suitable for surface mount assembly.  
The TLP190B consists of a GaAAs light emitting diode, optically  
coupled to a series connected photo diode array which is suitable for  
MOS FET gate drive.  
·
·
·
·
Open voltage: 7.0V (min.)  
Short current: 12.0µA (min.)  
Isolation voltage: 2500Vrms (min.)  
UL recognized: UL1577, file no. E67349  
TOSHIBA  
114C1  
Weight: 0.09 g  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
50  
Unit  
mA  
Pin Configuration (top view)  
Forward current  
I
F
6
1
Forward current  
I / °C  
F
-0.5  
mA / °C  
derating (Ta 25°C)  
LED  
Pulse forward current  
(100µs pulse 100pps)  
I
1
A
FP  
3
4
Reverse voltage  
V
3
125  
V
R
Junction temperature  
Forward current  
T
°C  
µA  
V
j
1. Anode  
I
50  
FD  
3. Cathode  
4. Cathode  
6. Anode  
Detector  
Reverse voltage  
V
10  
RD  
Junction temperature  
T
125  
°C  
°C  
°C  
°C  
j
Storage temperature range  
T
-55~125  
-40~85  
260  
stg  
opr  
Operating temperature range  
Lead soldering temperature (10 s)  
T
T
sol  
Isolation voltage  
BV  
2500  
Vrms  
S
(AC, 1 min., R.H. 60%)  
(Note)  
(Note) Device considered a two terminal device: Pins 1 and 3 shorted  
together and pins 4 and 6 shorted together.  
1
2002-09-25  

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