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TLHB5802 PDF预览

TLHB5802

更新时间: 2024-10-27 05:53:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 167K
描述
High Efficiency Blue LED, 5 mm Untinted Non - Diffused Package

TLHB5802 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
颜色@波长:Blue最大正向电流:0.02 A
最大正向电压:4.5 V透镜类型:CLEAR
最高工作温度:100 °C最低工作温度:-40 °C
总高度:8.7 mm峰值波长:428 nm
最大反向电压:5 V子类别:Visible LEDs
视角:8 degBase Number Matches:1

TLHB5802 数据手册

 浏览型号TLHB5802的Datasheet PDF文件第2页浏览型号TLHB5802的Datasheet PDF文件第3页浏览型号TLHB5802的Datasheet PDF文件第4页浏览型号TLHB5802的Datasheet PDF文件第5页浏览型号TLHB5802的Datasheet PDF文件第6页 
TLHB580.  
Vishay Semiconductors  
VISHAY  
High Efficiency Blue LED, 5 mm Untinted Non - Diffused  
Package  
Description  
This device has been redesigned in 1998 replacing  
SiC by GaN technology to meet the increasing  
demand for high efficiency blue LEDs.  
It is housed in a 5 mm waterclear plastic package.  
All packing units are categorized in luminous intensity  
groups. That allows users to assemble LEDs with uni-  
form appearance.  
19223  
Pb  
e2  
Features  
• GaN on SiC technology  
Pb-free  
• Standard 5 mm T-1 3/4 package  
Applications  
• Small mechanical tolerances  
• Small viewing angle  
• Very high intensity  
Status lights  
OFF / ON indicator  
Background illumination  
Readout lights  
• Luminous intensity categorized  
• ESD class 1  
Maintenance lights  
Legend light  
• Lead-free device  
Parts Table  
Part  
Color, Luminous Intensity  
Blue, I > 130 mcd  
Angle of Half Intensity ( ϕ)  
Technology  
GaN on SiC  
GaN on SiC  
TLHB5800  
TLHB5802  
4 °  
4 °  
V
Blue, I = (240 to 640) mcd  
V
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
TLHB580.  
Parameter  
Test condition  
Symbol  
Value  
Unit  
V
Reverse voltage  
V
I
5
20  
R
DC Forward current  
T
65 °C  
mA  
A
amb  
F
Surge forward current  
Power dissipation  
t
10 µs  
I
0.1  
p
FSM  
T
65 °C  
P
100  
mW  
°C  
amb  
V
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
T
100  
j
T
- 40 to + 100  
- 40 to + 100  
260  
°C  
amb  
T
°C  
stg  
t 5 s, 2 mm from body  
T
°C  
sd  
Thermal resistance junction/  
ambient  
R
350  
K/W  
thJA  
Document Number 83021  
Rev. 1.6, 30-Aug-04  
www.vishay.com  
1

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