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TLHB5802-AS12 PDF预览

TLHB5802-AS12

更新时间: 2024-10-27 14:36:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 109K
描述
Visible LED, Clear

TLHB5802-AS12 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.77
颜色@波长:Blue最大正向电流:0.02 A
最大正向电压:4.5 V透镜类型:CLEAR
最高工作温度:100 °C最低工作温度:-40 °C
总高度:8.7 mm峰值波长:428 nm
最大反向电压:5 V子类别:Visible LEDs
视角:8 degBase Number Matches:1

TLHB5802-AS12 数据手册

 浏览型号TLHB5802-AS12的Datasheet PDF文件第2页浏览型号TLHB5802-AS12的Datasheet PDF文件第3页浏览型号TLHB5802-AS12的Datasheet PDF文件第4页浏览型号TLHB5802-AS12的Datasheet PDF文件第5页 
TLHB580.  
Vishay Semiconductors  
High Efficiency Blue LED, 5 mm Untinted Non - Diffused Package  
FEATURES  
• GaN on SiC technology  
• Standard 5 mm T-1¾ package  
• Small mechanical tolerances  
• Small viewing angle  
• Very high intensity  
e2  
• Luminous intensity categorized  
19223  
• ESD class 1  
• Lead (Pb)-free device  
DESCRIPTION  
APPLICATIONS  
• Status lights  
This device has been redesigned in 1998 replacing  
SiC by GaN technology to meet the increasing  
demand for high efficiency blue LEDs.  
• OFF/ON indicator  
• Background illumination  
• Readout lights  
It is housed in a 5 mm waterclear plastic package.  
All packing units are categorized in luminous intensity  
groups. That allows users to assemble LEDs with  
uniform appearance.  
• Maintenance lights  
• Legend light  
PRODUCT GROUP AND PACKAGE DATA  
• Product group: LED  
• Package: 5 mm  
• Product series: standard  
• Angle of half intensity: 4°  
PARTS TABLE  
PART  
COLOR, LUMINOUS INTENSITY  
Blue, IV > 130 mcd  
Blue, IV = (320 to 860) mcd  
TECHNOLOGY  
GaN on SiC  
TLHB5800  
TLHB5802  
GaN on SiC  
1)  
ABSOLUTE MAXIMUM RATINGS TLHB580.  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
5
UNIT  
V
VR  
Reverse voltage  
Tamb 65 °C  
tp 10 µs  
IF  
IFSM  
PV  
DC Forward current  
Surge forward current  
Power dissipation  
20  
mA  
A
0.1  
Tamb 65 °C  
100  
100  
mW  
°C  
Tj  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
Tamb  
Tstg  
Tsd  
- 40 to + 100  
- 40 to + 100  
260  
°C  
°C  
t 5 s, 2 mm from body  
°C  
Thermal resistance junction/  
ambient  
RthJA  
350  
K/W  
Note:  
1)  
T
= 25 °C, unless otherwise specified  
amb  
Document Number 83021  
Rev. 1.7, 21-Sep-07  
www.vishay.com  
1

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